CVD Susceptor Structure for Controlling Errant Deposition
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Solution Overview
Problem
Errant deposition in CVD reactors leads to degradation of high-temperature superconductor films due to build-up on susceptor surfaces, causing non-uniformity and performance issues, and limits continuous processing of long tapes.
Innovation Solution
A susceptor design with raised sections and channels to collect errant deposition, combined with support ridges to prevent deposition on the susceptor surface, and a purge gas system to remove accumulated material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a heated susceptor is used in a CVD process, then substrate heating and film deposition are enabled, but errant deposition builds up on the susceptor surface causing film degradation
Solution Approach 1:
The susceptor surface is segmented into multiple raised sections with gaps between them. These gaps create channels that direct precursor vapor flow away from the susceptor edges, preventing errant deposition while maintaining effective substrate heating areas.
Solution Approach 2:
Different regions of the susceptor are given different functions: raised sections provide heating zones while gaps between them serve as deposition control channels. This local differentiation allows simultaneous optimization of heating efficiency and deposition uniformity.
2Productivity
If a heated susceptor is used in a CVD process, then film deposition occurs, but errant deposition buildup limits continuous processing of long tapes
Solution Approach 1:
The susceptor is divided into multiple raised sections separated by gaps, creating a pattern that prevents errant deposition accumulation. This segmentation allows continuous processing of long tapes by eliminating the buildup problem that would otherwise require periodic cleaning interruptions.
Solution Approach 2:
The harmful errant deposition is extracted from the heating zones by directing it into the gaps between raised sections. This separation removes the contaminant from the functional areas, enabling continuous operation without quality degradation.
3Use of energy by stationary object
If the susceptor surface is exposed, then heating efficiency is maintained, but errant deposition occurs on exposed surfaces
Solution Approach 1:
The susceptor surface is segmented into raised heating sections and gap channels. The raised sections remain exposed for efficient heating while the gaps provide controlled pathways for precursor flow that prevent random deposition on heating surfaces.
Solution Approach 2:
The gaps between raised sections act as intermediary channels that mediate between the heated susceptor surfaces and the precursor vapor flow. These channels guide the vapor flow in a controlled manner, preventing direct contact and deposition on the heating surfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents susceptor surface contamination, maintains film uniformity, and allows continuous processing of long tapes by minimizing errant deposition, thereby enhancing film quality and processing efficiency.
Implementation Method 1
a stainless steel or Hastelloy substrate tape is heated to high temperature, for example, 800°C to 900°C for the vapor phase precursor materials to deposit on the substrate tape
Implementation Method 2
precursor reactant(s) are introduced via a showerhead. Radiation lamps may be included to aid thin film growth on substrate
Implementation Method 3
a purge gas system to remove accumulated material
Data Source
Figure 1
Figure 2
Figure 3A~3B
AI summary
A susceptor (200) used in a deposition reactor (800) provides heat input and controls the build-up of errant deposition. The susceptor heats a substrate tape (120) within the reactor upon which one or more thin films are deposited, particularly high temperature superconductor HTS thin films produced in a Metal Organic Chemical Vapour Deposition MOCVD reactor.