CVD Chamber Temperature Control for Radial Gradient Reduction
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Solution Overview
Problem
Existing chemical vapor deposition (CVD) apparatuses suffer from significant radial and axial temperature gradients within the chamber, leading to uncontrollable film formation conditions, poor film thickness uniformity, and doping uniformity due to radial temperature differences and gas vortex formation.
Innovation Solution
A temperature control component is introduced inside the CVD reaction apparatus, comprising a heat absorption rod or hollow cylinder that heats the central area of the chamber, reducing radial temperature gradients and stabilizing the growth conditions by uniformly heating the reaction gas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a side wall heater is used to heat the reaction gas, then the reaction gas temperature is improved, but a large radial temperature gradient is caused leading to gas vortex and uncontrollable film formation
Solution Approach 1:
The patent applies local quality by using a central heater positioned at the center of the susceptor to heat the reaction gas locally in the central region, rather than using side wall heaters that create radial temperature gradients. This localized heating approach ensures uniform temperature distribution across the substrate surface, improving film thickness uniformity while maintaining adequate reaction gas temperature for film formation
Solution Approach 2:
The patent introduces a temperature control component as an intermediary element between the heat source and the reaction gas. This component, positioned at the center of the susceptor, acts as a mediator to distribute heat uniformly to the reaction gas without creating the radial temperature gradients that cause gas vortex and poor film uniformity
2Temperature
If a side wall heater is used to heat the reaction gas, then the reaction gas temperature is improved, but gas vortex and by-product deposition are caused leading to source loss and uncontrollable conditions
Solution Approach 1:
The patent applies local quality by using a central heater positioned at the center of the susceptor to heat the reaction gas locally in the central region, rather than using side wall heaters that create radial temperature gradients. This localized heating approach ensures uniform temperature distribution across the substrate surface, improving film thickness uniformity while maintaining adequate reaction gas temperature for film formation
Solution Approach 2:
The patent converts the harmful effect of side wall heating (which causes gas vortex and source loss) into a beneficial central heating approach. By positioning the heater at the center, the system eliminates the gas vortex phenomenon that causes decomposition products to deposit on walls and lose carbon and silicon sources, thereby converting a harmful heating configuration into a beneficial one
3Temperature
If a lower heater is used to heat the substrate, then the substrate temperature is improved, but a large axial temperature gradient is caused resulting in poor film uniformity
Solution Approach 1:
The patent applies segmentation by dividing the heating function into two independent heating zones: a lower heater for substrate heating and a central heater for reaction gas heating. This segmentation allows independent control of substrate temperature and reaction gas temperature, enabling optimization of both parameters without the large axial temperature gradients that occur when a single heater is used for both purposes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces radial temperature gradients, stabilizes film growth conditions, improves film thickness and doping uniformity, and prolongs the maintenance period of chamber components by minimizing by-product deposition.
Implementation Method 1
the temperature control component 500 emits heat to heat the reaction gas in a central area of the chamber
Implementation Method 2
a side heater provided close to an inner side wall of the chamber and configured to heat the reaction gas located in the chamber
Implementation Method 3
a lower heater is further provided below the carrying surface and configured to heat the substrate
Data Source
AI summary
A temperature control component and a chemical vapor deposition (CVD) reaction apparatus. The apparatus includes chamber; shower head provided at the top of the chamber and configured to introduce reaction gas for growing thin film into the chamber; and susceptor provided at the bottom of the chamber, configured to carry a substrate, wherein the chamber further includes a liner located inside the chamber and disposed around an inner side wall of the chamber; a side heater provided close to the inner side wall of the chamber, located above the susceptor and configured to heat the reaction gas in the chamber; and a temperature control component provided inside the chamber and located above the susceptor, and the temperature control component emits heat to heat the reaction gas in a central area of the chamber. The present invention can reduce a radial temperature gradient along a radial direction inside the chamber.