CVD Vacuum Handling for Corrosive Gas and Solid Residue Control
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Solution Overview
Problem
Existing chemical vapor deposition (CVD) processes face challenges in efficiently and safely processing refractory metal coating residuals, particularly in generating and maintaining the high vacuum levels required for efficient deposition of metals like tantalum on implant materials, which often result in corrosive gases and solid residues that can clog systems.
Innovation Solution
A system and method utilizing a combination of dry screw and liquid ring vacuum systems, along with filtration and neutralization processes, to maintain a consistent vacuum of 0.5 to 3.5 Torr, effectively handling CVD effluents by filtering solids and neutralizing gases, ensuring system integrity and safety.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a high vacuum level is generated to remove CVD waste gases and solids, then the deposition efficiency is improved, but the system becomes more susceptible to clogging from solid residues
Solution Approach 1:
The vacuum system is segmented into multiple stages with different vacuum levels. A roughing pump creates a preliminary vacuum, and a high vacuum pump achieves the required high vacuum level for efficient deposition. This segmentation allows the system to maintain high vacuum for productivity while protecting pumps from direct exposure to solid residues through intermediate trapping mechanisms.
Solution Approach 2:
An intermediary trapping mechanism is introduced between the CVD chamber and the vacuum pumps. This intermediary component captures solid residues before they reach the vacuum pumps, preventing clogging while allowing the high vacuum pump to maintain the necessary vacuum level for efficient deposition.
2Device complexity
If corrosive gases are processed without neutralization, then the system complexity is reduced, but environmental safety and system integrity deteriorate
Solution Approach 1:
The corrosive waste gases are converted from harmful byproducts into neutralized substances through chemical reaction with a neutralizing agent. This transformation eliminates environmental harm and system corrosion risks while integrating the neutralization function into the existing vacuum processing system.
Solution Approach 2:
The neutralization process is designed to occur rapidly as waste gases pass through the neutralizing agent, allowing continuous operation without significant delay. The system rushes through the neutralization step efficiently, minimizing processing time while ensuring complete neutralization before gas release.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system ensures efficient and safe processing of CVD residuals, maintaining vacuum levels necessary for optimal deposition while minimizing system clogging and environmental impact, allowing for continuous operation with multiple CVD furnaces.
Implementation Method 1
a vacuum component configured for maintaining a vacuum of about 0.5 Torr to about 3.5 Torr and actuatable for removing the one or more waste gases
Implementation Method 2
Chemical vapor deposition (CVD) can be used for uniform deposition of multiple atomic layers of a metal onto a substrate
Implementation Method 3
Vapor deposition is used in many industries to apply a thin film of a refractory metal onto a substrate product
Data Source
AI summary
The present disclosure includes a system for processing waste from a chemical vapor deposition process. The system can include an inlet configured to be connected to one or more chemical vapor deposition systems, the inlet configured for receiving an effluent comprising one or more waste gases, a vacuum component in fluid communication with the inlet, the vacuum component configured for maintaining a vacuum of about 0.5 Torr to about 3.5 Torr and actuatable for removing the one or more waste gases from the one or more chemical vapor deposition systems, and a fluid line fluidly connecting the inlet to the vacuum component; and a controller in communication with the vacuum component.

