Cyclic-Alkene Resist Composition for High-Sensitivity Fine Patterns
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Solution Overview
Problem
There is a demand for a resist composition that can achieve high sensitivity and form fine patterns with sizes of several tens of nanometers during semiconductor manufacturing, as advanced lithography technologies require improved pattern formation capabilities.
Innovation Solution
A resist composition that generates an acid upon light exposure, changing its solubility in a developing solution, incorporating a resin component with a specific constitutional unit derived from a compound represented by General Formula (a0-1), which includes a cyclic alkene and an acid dissociable group, allowing for the formation of resist patterns through exposure and development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used, then basic pattern formation is achieved, but sensitivity and development contrast are insufficient for fine pattern formation
Solution Approach 1:
The patent modifies the chemical structure of the resin component by introducing a specific constitutional unit with a cyclic alkene and acid dissociable group. This structural parameter change enables the resin to undergo solubility transformation upon acid generation during light exposure, thereby achieving both high sensitivity and excellent development contrast for fine pattern formation.
Solution Approach 2:
The resist composition employs a composite structure where the resin component (A1) containing the specific constitutional unit works synergistically with an acid generator component. This composite material approach combines the light-sensitive acid generation mechanism with the solubility-changing resin structure to achieve superior pattern formation performance.
2Manufacturing precision
If the wavelength of exposure light source is shortened to achieve pattern miniaturization, then resolution is improved, but sensitivity requirements become more stringent
Solution Approach 1:
The patent addresses the increased sensitivity requirements for short-wavelength lithography by designing a resin component with enhanced acid response characteristics. The specific constitutional unit structure optimizes the solubility change upon acid generation, enabling the resist to maintain high sensitivity even when using short-wavelength exposure light sources for achieving fine pattern resolution.
3Productivity
If high sensitivity is achieved through conventional means, then light absorption is improved, but development contrast deteriorates
Solution Approach 1:
The patent resolves the trade-off between sensitivity and development contrast by fundamentally changing the resin's chemical structure. The introduced constitutional unit with cyclic alkene and acid dissociable group provides a mechanism where light absorption and acid response are decoupled - the resin can be optimized for light absorption independently while the acid dissociable group ensures sharp solubility transformation, thereby achieving both high sensitivity and excellent development contrast simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves high sensitivity and excellent development contrast, enabling the formation of precise resist patterns suitable for semiconductor manufacturing.
Implementation Method 1
a chemically amplified resist composition containing a base material component whose solubility in a developing solution is changed by an action of an acid and an acid generator component that generates an acid upon light exposure
Data Source
AI summary
A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1). In the formulas, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Rpg represents an acid dissociable group represented by General Formula (a0-pg); A represents a cyclic alkene having only one carbon-carbon unsaturated bond in a ring skeleton; Ra01 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms; m1 represents an integer of 0 to 20; m2 represents an integer of 1 to 20; and * represents a bonding site