Cyclic ALD Etching for Solid-State Nanopore Size Control
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Solution Overview
Problem
Current methods for manufacturing solid-state nanopores and arrays are inefficient in achieving size and position control, making them costly and time-consuming, and often require biological materials with limited shelf life.
Innovation Solution
The use of cyclic atomic layer deposition (ALD) or chemical vapor deposition (CVD) combined with etching processes to form well-controlled solid-state nanopores and arrays by depositing dielectric materials and selectively etching them to reduce feature sizes until a precise nanopore is formed through a thin film on a substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If current solid-state nanopore fabrication methods (tunneling electron microscope, focused ion beam, electron beam) are used, then nanopores can be formed, but size and position control requirements cannot be easily and cheaply achieved, and the process is time consuming
Solution Approach 1:
The fabrication process is divided into multiple cyclic steps of dielectric material deposition and etching. Each cycle deposits a thin layer of dielectric material and then selectively etches it, progressively refining the nanopore dimensions. This segmented approach enables precise size and position control while maintaining efficient throughput, as each cycle can be optimized independently and multiple nanopores can be fabricated simultaneously in arrays.
2Manufacturing precision
If current solid-state nanopore fabrication methods are used, then nanopores can be formed, but the process is time consuming and costly
Solution Approach 1:
The method begins with forming features in a thin film deposited on the substrate before the cyclic deposition and etching process. This preliminary structuring establishes the initial geometry and position of future nanopores, guiding subsequent material deposition and etching. This preliminary action reduces the number of cycles needed to achieve final precision, thereby reducing total fabrication time while maintaining well-controlled nanopore dimensions.
3Adaptability or versatility
If biological membranes and biological pores are used for sequencing, then sequencing can be performed, but shelf life is limited and they must be kept cold prior to use
Solution Approach 1:
The invention replaces fragile, short-lived biological membranes with durable solid-state nanopores fabricated from stable materials like silicon nitride or silicon oxide. These solid-state structures have no shelf life limitations, do not require cold storage, and can be manufactured as disposable arrays. The cyclic deposition and etching process creates robust nanopores that maintain their structural integrity and sequencing performance over extended periods, eliminating the cold chain requirement while preserving sequencing capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the rapid and cost-effective fabrication of well-controlled nanopores and arrays with precise size and position control, improving signal-to-noise ratios during DNA sequencing by ensuring the nanopore size matches the sample size, enabling efficient DNA passage and improved sequencing accuracy.
Implementation Method 1
by cyclic atomic layer deposition (ALD), or chemical vapor deposition (CVD), and etching
Implementation Method 2
by cyclic atomic layer deposition (ALD), or chemical vapor deposition (CVD), and etching
Implementation Method 3
An etching process is then used to etch a portion of the dielectric material deposited over the substrate
Data Source
AI summary
Methods are provided for manufacturing well-controlled, solid-state nanopores and arrays of well-controlled, solid-state nanopores by a cyclic process including atomic layer deposition (ALD), or chemical vapor deposition (CVD), and etching. One or more features are formed in a thin film deposited on a topside of a substrate. A dielectric material is deposited over the substrate having the one or more features in the thin film. An etching process is then used to etch a portion of the dielectric material deposited over the substrate having the one or more features in the thin film. The dielectric material deposition and etching processes are optionally repeated to reduce the size of the features until a well-controlled nanopore is formed through the thin film on the substrate.