Resist Underlayer Film Composition with Cyclic Amino Organosilane

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Solution Overview

Problem

Current resist underlayer film compositions for semiconductor device lithography lack effective anti-reflective properties, intermixing prevention with photoresist, and high dry etching rates, particularly in advanced semiconductor manufacturing processes involving shorter wavelength light and complex substrate geometries.

Innovation Solution

A resist underlayer film forming composition containing hydrolyzable organosilanes with cyclic amino groups, which form polysiloxane structures upon hydrolysis and condensation, enhancing dry etching resistance and rates, and acting as a hardmask to prevent intermixing with photoresist and improve anti-reflective performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional organic bottom anti-reflective coatings are used, then ease of manufacture is improved, but dry etching rate is insufficient and intermixing with photoresist occurs

Engineering Contradiction:
Improveease of manufactureVSAvoiddry etching rate
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent uses composite materials by combining organosilane compounds with cyclic amino groups and other silane components to create a bottom anti-reflective coating that achieves both high dry etching rate and pattern filling capability, resolving the contradiction between ease of manufacture and reliability

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent changes the chemical composition parameters by incorporating specific organosilane compounds with cyclic amino groups, which provide both the desired etching resistance and pattern filling properties, thereby improving reliability while maintaining ease of manufacture

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If shorter wavelength active rays are used, then manufacturing precision is improved, but reflection on substrate increases causing harmful effects

Engineering Contradiction:
Improvefine processing capabilityVSAvoidreflection
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent converts the harmful reflection effect into a beneficial anti-reflective function by designing the bottom coating with organosilane compounds that have specific optical properties, allowing the coating to absorb or scatter the shorter wavelength radiation and prevent substrate reflection

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent introduces an intermediary bottom anti-reflective coating layer between the photoresist and substrate, which mediates the interaction by absorbing shorter wavelength radiation and preventing direct reflection from the substrate, thereby enabling use of shorter wavelength for finer processing

Inventive Principle:
Principle #24Intermediary (Mediator)

3Adaptability or versatility

If bottom anti-reflective coating is formed on high aspect ratio substrates, then adaptability is improved, but filling characteristics and planarization are required simultaneously

Engineering Contradiction:
Improveapplicability to high aspect ratio substratesVSAvoidfilling and planarization quality
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent changes the rheological and chemical parameters of the coating composition by using organosilane compounds that provide both good flow characteristics for filling high aspect ratio holes and appropriate viscosity for planarization, achieving both filling and planarization quality simultaneously

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition achieves higher dry etching rates and resistance, preventing pattern collapse and ensuring accurate pattern transfer, even with thinner resist films, while functioning as a hardmask and anti-reflective coating, effectively addressing the limitations of existing compositions.

Implementation Method 1

containing a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof

Methodology Applied
Scientific EffectHydrolysis: Hydrolysis

Implementation Method 2

containing a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof

Methodology Applied
Scientific EffectCondensation: Condensation

Data Source

PatentUS11392037B2Resist underlayer film forming composition containing silicone having cyclic amino group
Publication Date: 2022.07.19 NISSAN CHEM CORP
  • US11392037B2 patent drawing
  • US11392037B2 patent drawing
  • US11392037B2 patent drawing

AI summary

There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof as a silane, wherein a silane having a cyclic amino group is contained in an amount of less than 1% by mole, preferably 0.01 to 0.95% by mole. A film forming composition comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The cyclic amino group may be a secondary amino group or a tertiary amino group. The hydrolyzable organosilane is a compound of Formula (1):R1aR2bSi(R3)4−(a+b)  Formula (1)(where R1 is a cyclic amino group or an organic group containing a cyclic amino group).