Resist Underlayer Film Composition with Cyclic Amino Organosilane
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Solution Overview
Problem
Current resist underlayer film compositions for semiconductor device lithography lack effective anti-reflective properties, intermixing prevention with photoresist, and high dry etching rates, particularly in advanced semiconductor manufacturing processes involving shorter wavelength light and complex substrate geometries.
Innovation Solution
A resist underlayer film forming composition containing hydrolyzable organosilanes with cyclic amino groups, which form polysiloxane structures upon hydrolysis and condensation, enhancing dry etching resistance and rates, and acting as a hardmask to prevent intermixing with photoresist and improve anti-reflective performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional organic bottom anti-reflective coatings are used, then ease of manufacture is improved, but dry etching rate is insufficient and intermixing with photoresist occurs
Solution Approach 1:
The patent uses composite materials by combining organosilane compounds with cyclic amino groups and other silane components to create a bottom anti-reflective coating that achieves both high dry etching rate and pattern filling capability, resolving the contradiction between ease of manufacture and reliability
Solution Approach 2:
The patent changes the chemical composition parameters by incorporating specific organosilane compounds with cyclic amino groups, which provide both the desired etching resistance and pattern filling properties, thereby improving reliability while maintaining ease of manufacture
2Manufacturing precision
If shorter wavelength active rays are used, then manufacturing precision is improved, but reflection on substrate increases causing harmful effects
Solution Approach 1:
The patent converts the harmful reflection effect into a beneficial anti-reflective function by designing the bottom coating with organosilane compounds that have specific optical properties, allowing the coating to absorb or scatter the shorter wavelength radiation and prevent substrate reflection
Solution Approach 2:
The patent introduces an intermediary bottom anti-reflective coating layer between the photoresist and substrate, which mediates the interaction by absorbing shorter wavelength radiation and preventing direct reflection from the substrate, thereby enabling use of shorter wavelength for finer processing
3Adaptability or versatility
If bottom anti-reflective coating is formed on high aspect ratio substrates, then adaptability is improved, but filling characteristics and planarization are required simultaneously
Solution Approach 1:
The patent changes the rheological and chemical parameters of the coating composition by using organosilane compounds that provide both good flow characteristics for filling high aspect ratio holes and appropriate viscosity for planarization, achieving both filling and planarization quality simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves higher dry etching rates and resistance, preventing pattern collapse and ensuring accurate pattern transfer, even with thinner resist films, while functioning as a hardmask and anti-reflective coating, effectively addressing the limitations of existing compositions.
Implementation Method 1
containing a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof
Implementation Method 2
containing a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof
Data Source
AI summary
There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof as a silane, wherein a silane having a cyclic amino group is contained in an amount of less than 1% by mole, preferably 0.01 to 0.95% by mole. A film forming composition comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The cyclic amino group may be a secondary amino group or a tertiary amino group. The hydrolyzable organosilane is a compound of Formula (1):R1aR2bSi(R3)4−(a+b) Formula (1)(where R1 is a cyclic amino group or an organic group containing a cyclic amino group).


