Cyclic Carbonate Acid Generator for ArF Lithography Resolution
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Solution Overview
Problem
Conventional acid generators for resist compositions in microfabrication processes face challenges such as insufficient acid strength, poor storage stability, acid diffusion, and environmental concerns, limiting their ability to achieve high resolution and sensitivity while maintaining pattern fidelity and adhesion.
Innovation Solution
A novel acid generator that produces a sulfonic acid represented by a specific general formula, responsive to high-energy beams or heat, is developed, allowing for various molecular designs to optimize resist composition performance, including improved exposure margin and mask fidelity without degrading resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional photoacid generators generating perfluoroalkanesulfonic acid are used, then acid strength is sufficient, but storage stability deteriorates due to PFOS environmental concerns
Solution Approach 1:
The patent changes the chemical structure parameters of the photoacid generator by introducing a cyclic carbonate group and modifying the alkyl chain structure. This transforms the acid generator from conventional perfluoroalkanesulfonic acid type to a novel structure that generates perfluoroalkyl carbonate acid, achieving both sufficient acid strength and improved storage stability while eliminating PFOS environmental concerns
Solution Approach 2:
The patent creates a composite photoacid generator structure combining fluorinated alkyl groups with cyclic carbonate moieties. This composite molecular structure provides both the high acid strength needed for ArF lithography and the environmental stability required for modern manufacturing, resolving the contradiction between performance and stability
2Manufacturing precision
If photoacid generators generating perfluoroalkanesulfonic acid are used, then acid strength is sufficient for high resolution, but pattern fidelity deteriorates due to acid diffusion
Solution Approach 1:
The patent introduces a cyclic carbonate group at the alpha position of the photoacid generator, creating a localized structural feature that restricts acid diffusion while maintaining high acid strength. This local structural modification provides pattern fidelity without compromising the resolution achieved through high acid strength
Solution Approach 2:
The patent modifies the molecular structure parameters by incorporating cyclic carbonate functionality, which changes the steric and electronic properties of the photoacid generator. This structural parameter change reduces acid diffusion length while maintaining sufficient acid strength for high-resolution patterning
3Manufacturing precision
If ArF immersion lithography is used, then resolution is improved, but device complexity increases due to additional liquid medium requirements
Solution Approach 1:
The patent develops a resist composition that is self-optimized for ArF immersion lithography, with the photoacid generator structure automatically adapting to the immersion environment. The cyclic carbonate structure provides inherent stability that works seamlessly with liquid immersion media, eliminating the need for complex additional control systems
4Productivity
If conventional resist compositions are used, then sensitivity is achieved, but adhesion deteriorates due to insufficient acid strength for cutting acid labile groups
Solution Approach 1:
The patent changes the acid generator structure to produce perfluoroalkyl carbonate acid with optimized acid strength parameters. This structural modification ensures sufficient acid strength to effectively cut acid labile groups in the resist polymer, maintaining both high sensitivity and strong adhesion to the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The acid generator provides excellent exposure margin, high resolution, and dry etching resistance, suitable for deep-ultraviolet lithography, while minimizing environmental impact and ensuring good storage stability and pattern circularity.
Implementation Method 1
an acid generator which generates a sulfonic acid represented by general formula (1) in response to high-energy beam or heat
Implementation Method 2
an acid generator which generates a sulfonic acid represented by general formula (1) in response to high-energy beam or heat
Data Source
AI summary
There is disclosed an acid generator generating a sulfonic acid represented by the following general formula (1) in response to high-energy beam or heat:As a result, there is provided a novel acid generator which is suitably used as an acid generator for a resist composition, which solves the problems of exposure margin and MEF particularly without degradation of resolution and can be effectively and widely used, a chemically amplified resist composition using the same, and a patterning process.