Cyclic CVD Conductive Structure Formation for Defect Reduction
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in reducing defects and improving uniformity as device scaling-down continues, particularly in forming conductive structures on dielectric surfaces.
Innovation Solution
A method involving multiple deposition and modification processes using specific gases (G1, G2, G3, and G4) in a chemical vapor deposition chamber to form and modify conductive structures on dielectric surfaces, with G2 passivating the surfaces of the first conductive structures to prevent defects and G4 forming second conductive structures on the dielectric surface, thereby reducing voids and seams.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional deposition processes are used to form conductive structures, then the manufacturing process is simple, but the conductive structures have high resistance and contain defects such as voids and seams
Solution Approach 1:
The deposition process is segmented into multiple cycles, each consisting of a deposition step followed by a modification step. This segmentation allows the process to build conductive structures incrementally while continuously improving their quality, resolving the contradiction between simple manufacturing and high reliability by breaking down the complex task into manageable, repeating units.
Solution Approach 2:
The patent employs periodic deposition-modification cycles where deposition and modification steps alternate. This periodic action enables the system to repeatedly deposit material and then modify it to reduce defects and resistance, achieving high reliability through iterative improvement rather than a single complex process step.
2Productivity
If device scaling-down continues, then device density increases, but defects in conductive structures become more prevalent
Solution Approach 1:
The modification step is performed preliminarily during each deposition cycle, before subsequent deposition steps. This preliminary modification prepares the surface and reduces defects early in the process, ensuring that as devices are scaled down and packed more densely, the conductive structures maintain high uniformity and low defect rates throughout the formation process.
Solution Approach 2:
The cyclic deposition-modification process ensures continuous improvement of the conductive structure quality throughout the formation process. Rather than a single continuous deposition that accumulates defects, the continuous alternating action of deposition and modification maintains high manufacturing precision even as device density increases through scaling.
3Reliability
If additional adhesion or diffusion barrier layers are added to improve performance, then adhesion and performance improve, but the manufacturing process becomes more complex and time-consuming
Solution Approach 1:
The patent merges the functions of adhesion promotion and diffusion barrier into the conductive structure itself through the modification step. By modifying the surface properties of the deposited conductive material, the process achieves both good adhesion and diffusion barrier performance without requiring separate additional layers, thus reducing manufacturing cycle time while maintaining or improving reliability.
Solution Approach 2:
The conductive structure is given multi-functionality through the modification process, serving simultaneously as the conductive element, adhesion layer, and diffusion barrier. This universal approach eliminates the need for multiple specialized layers, reducing the overall manufacturing time and process complexity while achieving the same or better performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in conductive structures with fewer defects and lower resistance, improving the performance and adhesion of semiconductor structures without the need for additional adhesion or diffusion barrier layers.
Implementation Method 1
introducing a first gas on the dielectric structure to form a first conductive structure on the dielectric structure
Implementation Method 2
introducing a second gas on the first conductive structure to modify the first conductive structure
Implementation Method 3
introducing a third gas on the dielectric structure to form a second conductive structure on the dielectric structure
Data Source
AI summary
A method for forming a semiconductor structure is provided. The method includes forming a dielectric structure on a semiconductor substrate, introducing a first gas on the dielectric structure to form first conductive structures on the dielectric structure, and introducing a second gas on the first conductive structures and the dielectric structure. The second gas is different from the first gas. The method also includes introducing a third gas on the first conductive structures and the dielectric structure to form second conductive structures on the dielectric structure. The first gas and the third gas include the same metal.