Cyclic Deposition for Carbon Nano-Material Layer Formation
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Solution Overview
Problem
Conventional methods for forming carbon nano-material layers, such as CNT, often require high substrate temperatures and generate carbon particles that interfere with the formation of desired shapes and properties, particularly in electronic devices like highly-integrated semiconductor devices.
Innovation Solution
A cyclic deposition technique involving sequential injection of source and reactant gases, with optional catalyst and purge gases, and activation by plasma or light, to form a chemisorption layer and subsequently a carbon nano-material layer at lower temperatures, minimizing particle generation and achieving desired properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods (arc discharge, laser ablation, CVD) are used to form carbon nano-material layers, then carbon nano-materials can be produced, but high substrate temperatures and carbon particle generation occur that interfere with desired shapes and properties
Solution Approach 1:
The deposition process is segmented into distinct sequential steps: source gas injection to form chemisorption layer, purge gas injection to exhaust remaining source gas, reactant gas injection to remove non-carbon atoms, and another purge gas injection to exhaust reactant gas. This segmentation allows precise control of each phase, preventing carbon particle generation while maintaining low substrate temperatures.
Solution Approach 2:
The method employs periodic cyclic deposition where gases are injected and exhausted in repeating cycles. Each cycle consists of source gas injection, purge gas injection, reactant gas injection, and purge gas injection. This periodic action enables complete removal of carbon particles and non-carbon atoms while forming high-quality carbon nano-material layers at low temperatures.
2Manufacturing precision
If conventional methods are used to form carbon nano-material layers, then carbon nano-materials can be produced, but carbon particles are generated that interfere with the formation of desired shapes and properties
Solution Approach 1:
The method extracts and removes harmful carbon particles and non-carbon atoms through sequential purge gas injection steps. After source gas injection forms the chemisorption layer, purge gas is introduced to exhaust remaining source gas and carbon particles. After reactant gas injection removes non-carbon atoms, another purge gas injection exhausts reactant gas and generated particles, leaving only desired carbon nano-material.
Solution Approach 2:
Purge gases (inert atmosphere) are introduced between deposition steps to create an inert environment that prevents unwanted chemical reactions and facilitates the removal of carbon particles and excess gases. This inert atmosphere ensures clean deposition without particle generation while maintaining controlled conditions for high-quality carbon nano-material formation.
3Ease of manufacture
If high substrate temperatures are used in conventional methods, then carbon nano-material layers can be formed, but the process becomes unsuitable for highly-integrated semiconductor devices requiring low temperature processing
Solution Approach 1:
The method changes the process parameters by using sequential gas injection cycles instead of continuous high-temperature processing. By controlling the timing and sequence of source gas, purge gas, and reactant gas injection, the process achieves high-quality carbon nano-material layer formation at low substrate temperatures, making it suitable for highly-integrated semiconductor devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the formation of carbon nano-material layers with desired shapes and properties at reduced temperatures, preventing carbon particle interference and enhancing the quality of the carbon nano-material layer for applications in semiconductor devices.
Implementation Method 1
A source gas may be injected into the reactor for a first period of time to form a chemisorption layer including carbon atoms on the substrate
Implementation Method 2
A reactant gas may be injected into the reactor for a third period of time to remove atoms other than carbon from the chemisorption layer, and to form a carbon atoms layer on the substrate
Implementation Method 3
The chemical reaction may be accelerated by activating the reactant gas by using plasma or light
Data Source
AI summary
A method of forming a carbon nano-material layer may involve a cyclic deposition technique. In the method, a chemisorption layer or a chemical vapor deposition layer may be formed on a substrate. Impurities may be removed from the chemisorption layer or the chemical vapor deposition layer to form a carbon atoms layer on the substrate. More than one carbon atoms layer may be formed by repeating the method.