Cyclic Deposition of Transition Metal Halide Precursors
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Solution Overview
Problem
There is a need for alternative methods to deposit transition metal chalcogenides and pnicides with high control and precision, as existing methods have drawbacks that reduce the attractiveness of these materials for new applications.
Innovation Solution
The method involves a cyclic vapor deposition process using a transition metal precursor and a second precursor in a reaction chamber, where the transition metal precursor includes a transition metal halide bound to an adduct ligand, and a reducing agent is used to form elemental transition metal layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to deposit transition metal chalcogenides, then deposition can be achieved, but control and precision are insufficient
Solution Approach 1:
The deposition process is divided into multiple cyclic steps including precursor introduction, reaction, and purge phases. Each cycle deposits a controlled amount of material, allowing precise thickness control through number of cycles. This segmentation enables accurate deposition of ultrathin layers with atomic-level precision.
Solution Approach 2:
The patent employs periodic cyclic deposition where precursors are introduced in alternating pulses rather than continuously. The reaction chamber undergoes repeated cycles of precursor exposure, reaction, and purification. This periodic action provides superior control over deposition rate and film quality compared to continuous methods.
2Quantity of substance
If ultrathin continuous layers are deposited, then application potential is enhanced, but deposition control becomes more challenging
Solution Approach 1:
The ultrathin layer is built up atom-by-atom through segmented cyclic deposition steps. Each cycle contributes a monolayer or sub-monolayer, enabling precise control of final thickness. The total thickness is controlled by the number of cycles rather than continuous exposure time.
Solution Approach 2:
The deposition parameters including temperature, pressure, and precursor pulse duration are optimized to achieve controlled deposition of ultrathin layers. By adjusting these parameters, the process can deposit layers from sub-nanometer to several nanometers thickness with atomic-level precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the deposition of ultrathin, continuous layers of transition metal chalcogenides and pnicides with controlled thickness and composition, enhancing their potential for applications in semiconductor devices and other microelectronic applications.
Implementation Method 1
a method of forming transition metal-comprising material on a substrate by a cyclic deposition process
Implementation Method 2
contacting the transition metal-comprising material with a reducing agent thereby forming an elemental transition metal
Data Source
AI summary
The current disclosure relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to a method of forming a transition metal-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor comprising a transition metal compound in the reaction chamber, and providing a second precursor in the reaction chamber, wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and the second precursor comprises a chalcogen or a pnictogen. The disclosure further relates to a method of forming a transition metal layer, and to semiconductor devices. Further, a vapor deposition assembly is disclosed.