Cyclic Olefin Polymer Underlayer Film for EUV Lithography
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Solution Overview
Problem
Current materials for resist underlayer films in semiconductor manufacturing fail to achieve sufficient optical characteristics, etching resistance, and flatness, particularly on substrates with complex structures, and generate volatile components during EUV exposure, leading to pattern refinement challenges.
Innovation Solution
A cyclic olefin polymer-based material with specific structural units and molecular weight ranges, which provides excellent optical characteristics, etching resistance, and suppressed volatile component generation, while maintaining high flatness and adhesiveness on complex substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional materials are used for resist underlayer films, then manufacturing process is simple, but optical characteristics, etching resistance, and flatness are insufficient
Solution Approach 1:
The patent employs composite materials by combining multiple polymer components with specific functional groups (carboxyl, hydroxyl, amine groups) to create a resist underlayer film material that simultaneously achieves excellent optical characteristics, etching resistance, and flatness. The composite structure allows each component to contribute specific properties, resolving the contradiction between performance and simplicity.
Solution Approach 2:
The invention applies local quality by incorporating specific functional groups at controlled ratios (0.1-10 mmol/g for carboxyl, hydroxyl, or amine groups) within the polymer structure. This localized functionalization provides targeted improvements in optical characteristics and etching resistance without requiring complete structural redesign, balancing performance enhancement with manufacturing feasibility.
2Manufacturing precision
If materials with high embedding property are used to fill substrate trenches, then substrate embedding is improved, but surface flatness deteriorates
Solution Approach 1:
The patent utilizes parameter changes by controlling the molecular weight, functional group content, and polymer composition to achieve optimal balance between embedding capability and surface flatness. The specific parameter ranges (e.g., carboxyl group content of 0.1-10 mmol/g) allow the material to adapt its properties, providing sufficient embedding while maintaining the required surface flatness for subsequent lithography processes.
3Reliability
If resist layer thickness is decreased to avoid pattern collapse, then pattern collapse is prevented, but sensitivity to underlayer flatness increases
Solution Approach 1:
The resist underlayer film material acts as an intermediary between the substrate and the resist layer. By optimizing its composition with specific functional groups and polymer structures, it provides a stable interface that compensates for substrate unevenness, thereby enabling thin resist layers to be applied successfully without pattern collapse while reducing sensitivity to underlying flatness variations.
4Reliability
If organic anti-reflective materials are used, then anti-reflection function is achieved, but volatile component generation occurs during baking
Solution Approach 1:
The patent addresses volatile component generation by carefully selecting polymer types and controlling functional group content within specific ranges. The use of polymers with stable chemical structures and controlled crosslinking density reduces outgassing during baking while preserving the anti-reflection function, thus eliminating harmful volatile emissions without sacrificing optical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The material enables the formation of resist underlayer films with improved optical characteristics, etching resistance, and flatness, effectively addressing the challenges of substrate complexity and volatile component generation, enhancing semiconductor pattern refinement capabilities.
Implementation Method 1
the material includes a cyclic olefin polymer... which provides excellent optical characteristics... and suppressed volatile component generation
Data Source
AI summary
A material for forming an underlayer film according to the present invention is a material for forming an underlayer film which is used to form a resist underlayer film used in a multi-layer resist process, the material including a cyclic olefin polymer which has a repeating structural unit [A] represented by Formula (1) and a repeating structural unit [B] represented by Formula (2), in which a molar ratio [A]/[B] of the structural unit [A] to the structural unit [B] in the cyclic olefin polymer is greater than or equal to 5/95 and less than or equal to 95/5.