Cyclodisilazane Derivative Low-Temperature Silicon Film Deposition
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Solution Overview
Problem
Existing silicon precursors face challenges in forming ultra-fine thin films with uniform thickness and excellent electrical properties at low temperatures, particularly due to high temperature processes and limitations in step coverage and etching properties in semiconductor and display device manufacturing.
Innovation Solution
A novel cyclodisilazane derivative with a stable square-shaped ring structure, capable of forming silicon thin films with high cohesion, deposition rate, and physical and electrical properties at low temperatures, is developed. This derivative is liquid at room temperature, has high volatility, and is synthesized through specific reaction methods involving silane and amine derivatives, enabling easy handling and high purity film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If existing silicon precursors are used in conventional deposition processes, then film deposition can be achieved, but high temperature processing (600°C or more) is required which limits application to next-generation semiconductors and display devices
Solution Approach 1:
The patent modifies the molecular structure of silicon precursors by introducing specific organic groups (e.g., -CH2CH3, -CH(CH3)2) to alter physical and chemical parameters. This structural modification enables the precursor to decompose at lower temperatures while maintaining film quality, thus resolving the contradiction between low deposition temperature and suitability for next-generation devices
Solution Approach 2:
The invention creates composite molecular structures combining silicon centers with specific organic ligands and cyclic frameworks. This composite design provides both thermal stability for handling and controlled low-temperature reactivity for deposition, enabling application in advanced semiconductor manufacturing
2Manufacturing precision
If existing silicon precursors are used, then deposition can proceed, but uniform thin film formation with excellent electrical properties is difficult to achieve at low temperatures
Solution Approach 1:
The patent optimizes molecular parameters including Si-N bond length, ring strain energy, and organic group configuration to achieve controlled decomposition kinetics. This results in uniform film formation at low temperatures with excellent electrical properties, resolving the contradiction between manufacturing precision and deposition temperature
Solution Approach 2:
The precursor molecules are pre-designed with specific structural configurations that facilitate controlled decomposition and uniform film formation. The preliminary molecular design ensures that decomposition occurs uniformly at low temperatures, achieving excellent film quality without requiring high temperature processing
3Reliability
If conventional precursors are used, then deposition can be performed, but step coverage and etching properties are limited
Solution Approach 1:
The patent modifies precursor volatility and reactivity parameters through organic group selection and molecular weight optimization. This enables improved step coverage and etching properties while maintaining process simplicity, resolving the contradiction between reliability and ease of manufacture
4Manufacturing precision
If existing silicon precursors are used, then deposition can proceed, but excellent novel silicon precursor with high volatility and thermal stability is needed for ultra-fine thin film formation
Solution Approach 1:
The invention designs composite molecular structures with silicon centers coordinated to specific organic ligands and cyclic frameworks. This composite structure provides both high volatility for uniform deposition and thermal stability for handling, enabling ultra-fine thin film formation with excellent uniformity
Solution Approach 2:
The patent optimizes molecular parameters including vapor pressure, decomposition temperature, and molecular weight to achieve the desired balance between volatility and stability. This parameter optimization enables ultra-fine thin film formation while maintaining precursor stability during handling and storage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cyclodisilazane derivative allows for the formation of silicon-containing thin films with high purity, excellent physical and electrical properties, and superior step coverage, facilitating their use in advanced semiconductor and display applications.
Implementation Method 1
metal organic chemical vapor deposition (MOCVD) forming a film on a surface of a substrate by reacting a silicon precursor in a mixed gas form and a reactive gas
Implementation Method 2
atomic layer deposition (ALD) forming a film by physical or chemical adsorption of a silicon precursor in a gas form on a surface of a substrate, followed by sequential introduction of a reactive gas
Implementation Method 3
plasma enhanced chemical vapor deposition (PECVD), plasma enhanced atomic layer deposition (PEALD) using plasma capable of being deposited at a low temperature
Data Source
AI summary
Provided are a novel cyclodisilazane derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the cyclodisilazane derivative having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under a pressure where handling is easy, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.