Metal-Film Etching Composition with Cyclometallated Accelerators
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Solution Overview
Problem
Current etching processes for semiconductor manufacturing face challenges in achieving high etching selectivity and efficiency for metal-containing films, often resulting in surface residue and reduced electrical characteristics due to inadequate etching compositions.
Innovation Solution
An etching composition comprising an oxidizer, an ammonium salt, and an accelerator, where the accelerator includes a first and second compound capable of forming cyclometallated rings, is used to enhance etching selectivity and rate for metal-containing films, specifically targeting films like titanium nitride and aluminum nitride.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching compositions are used for metal-containing films, then the etching process can be performed, but the etching selectivity to adjacent films deteriorates and surface residue remains
Solution Approach 1:
The patent changes the chemical parameters of the etching composition by incorporating specific accelerators (compounds capable of forming cyclometallated rings) along with oxidizers and ammonium salts. This parameter change enables high etching rates for metal-containing films while maintaining excellent selectivity and preventing surface residue formation, directly resolving the technical contradiction between achieving effective etching and avoiding harmful residues.
2Productivity
If etching composition provides high etching rate, then productivity increases, but etching selectivity to adjacent films deteriorates
Solution Approach 1:
The patent creates a composite etching composition system combining oxidizers (such as hydrogen peroxide), ammonium salts (such as ammonium fluoride), and accelerators (compounds capable of forming cyclometallated rings). This composite formulation achieves synergistic effects where the accelerator enhances the etching rate for metal-containing films while the ammonium salt provides selectivity control, resolving the contradiction between high productivity and manufacturing precision.
3Device complexity
If single accelerator is used in etching composition, then composition is simple, but etching performance and stability deteriorate
Solution Approach 1:
The patent merges multiple accelerator compounds into a single etching composition formulation, combining their effects to achieve both high etching performance and excellent storage stability. This combination approach allows the composition to maintain reliability over time while providing consistent etching rates, resolving the contradiction between simplicity and reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etching composition significantly improves etching selectivity and rate, reducing surface residue and enhancing the productivity of the etching process, leading to improved semiconductor device performance.
Implementation Method 1
an oxidizer
Implementation Method 2
the first compound may be a compound capable of forming a cyclometallated 5-membered ring or a cyclometallated 6-membered ring, which comprises a metal or metal ion combined with at least one of O, S, and N
Data Source
Figure 1
Figure 2~3
AI summary
An etching composition may include an oxidizer, an ammonium salt, an aqueous solvent, and an accelerator. A method of etching a metal-containing film may be performed using the etching composition, and a method of manufacturing a semiconductor device may be performed using the etching composition.