Functionalized Cyclosilazane Precursors for Conformal Low-Temperature ALD
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Solution Overview
Problem
Current methods for depositing silicon-containing films, such as silicon oxide, at low temperatures using atomic layer deposition (ALD) or plasma-enhanced ALD face challenges with impurities like nitrogen, reduced conformality, and lower control over film thickness, especially in high aspect ratio structures, due to precursor self-reactivity at higher temperatures.
Innovation Solution
The use of functionalized cyclosilazane precursor compounds, specifically those following certain chemical formulas, in combination with oxygen-containing or nitrogen-containing reactants, allows for the deposition of stoichiometric or non-stoichiometric silicon-containing films at temperatures of 600° C. or lower through processes like plasma-enhanced ALD, PECCVD, or FCVD, achieving high conformality and low chemical impurity levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional precursors are used for low-temperature ALD deposition, then deposition temperature is reduced, but film conformality deteriorates and chemical impurities increase
Solution Approach 1:
The invention changes the chemical parameters of the precursor molecule by introducing specific functional groups (amino, alkoxyl, halide) at defined positions relative to the silicon atom. This molecular parameter change enables the precursor to maintain reactivity and film-forming capability at lower temperatures while preserving film conformality, resolving the trade-off between temperature reduction and conformality maintenance
2Temperature
If conventional precursors are used for low-temperature ALD deposition, then deposition temperature is reduced, but chemical impurity levels increase
Solution Approach 1:
The invention modifies the precursor's molecular parameters by adding functional groups that control decomposition behavior. These groups enable complete reaction at lower temperatures without generating harmful chemical impurities, allowing temperature reduction while maintaining film purity
Solution Approach 2:
The functional groups on the precursor act as intermediaries that facilitate controlled reaction pathways. They mediate between the precursor and reactant gases, enabling complete conversion at lower temperatures and preventing the formation of unwanted byproducts and chemical impurities
3Manufacturing precision
If higher temperatures are used for ALD deposition, then film density improves, but precursor self-reactivity increases causing loss of control over film thickness
Solution Approach 1:
The invention changes the thermal and reactivity parameters of the precursor through functional group modification. This allows the precursor to maintain stable, controlled reactivity at lower temperatures while still producing dense films, eliminating the need to use higher temperatures that cause self-reactivity and thickness control issues
4Productivity
If growth rate is increased for efficient deposition, then productivity improves, but film conformality in high aspect ratio structures deteriorates
Solution Approach 1:
The invention optimizes the precursor's molecular parameters to achieve a balanced reactivity profile. The functional groups are positioned and selected to provide appropriate reaction kinetics that enable both high growth rates and complete surface coverage, maintaining conformality even at elevated deposition rates in high aspect ratio structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of silicon-containing films with densities of 2.1 g/cc or greater, growth rates of 2.0 Å/cycle or greater, and high conformality, while minimizing chemical impurities, thus addressing the limitations of existing low-temperature deposition methods.
Implementation Method 1
The use of functionalized cyclosilazane precursor compounds, specifically those following certain chemical formulas, in combination with oxygen-containing or nitrogen-containing reactants, allows for the deposition of stoichiometric or non-stoichiometric silicon-containing films at temperatures of 600° C. or lower through processes like plasma-enhanced ALD, PECCVD, or FCVD
Implementation Method 2
The use of functionalized cyclosilazane precursor compounds, specifically those following certain chemical formulas, in combination with oxygen-containing or nitrogen-containing reactants, allows for the deposition of stoichiometric or non-stoichiometric silicon-containing films at temperatures of 600° C. or lower through processes like plasma-enhanced ALD, PECCVD, or FCVD
Data Source
AI summary
Described herein are functionalized cyclosilazane precursor compounds and compositions and methods comprising same to deposit a silicon-containing film such as, without limitation, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, or a combination thereof.