Cylinder-Shaped Capacitor Electrodes With Lattice Support

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Solution Overview

Problem

High aspect-ratio container-shaped storage nodes in capacitors are structurally weak and prone to toppling, twisting, or breaking due to their tall and thin dimensions, which limits their scalability in high-density DRAM devices.

Innovation Solution

A semiconductor structure featuring cylinder-shaped electrodes with an upper support structure comprising a first lattice structure and a lower support structure that interlocks the middle portions of the electrodes, preventing toppling, along with an annular spacer around the tip portion, all made from materials like silicon nitride and silicon oxide, ensuring stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If high aspect-ratio container-shaped storage nodes are used to reduce footprint, then capacitor density is improved, but structural strength deteriorates causing toppling and breaking

Engineering Contradiction:
Improvecapacitor footprintVSAvoidstructural strength
Core Design Contradiction:
Area of stationary objectVSStrength

Solution Approach 1:

The support structure is divided into multiple discrete lattice elements arranged in a lattice pattern. These segmented lattice pieces work together to provide distributed support to the high aspect-ratio storage nodes, preventing toppling while maintaining the compact footprint.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The lattice support structure provides localized support at specific positions beneath the storage nodes. By concentrating support at critical points where toppling would occur, the structure achieves effective stabilization without requiring uniform reinforcement throughout the entire capacitor area.

Inventive Principle:
Principle #3Local quality

2Device complexity

If single lattice layer is used to retain uppermost position, then device complexity is reduced, but reliability deteriorates due to insufficient support

Engineering Contradiction:
Improvesupport structure complexityVSAvoidstructural stability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The solution transitions from a single-layer (2D) lattice structure to a multi-layer (3D) lattice structure. By stacking multiple lattice layers at different vertical positions, the structure provides support at multiple heights, significantly improving reliability while maintaining relatively simple individual layer designs.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS9018733B1Capacitor, storage node of the capacitor, and method of forming the same
Publication Date: 2015.04.28 MICRON TECHNOLOGY INC
  • US9018733B1 patent drawing
  • US9018733B1 patent drawing
  • US9018733B1 patent drawing

AI summary

A semiconductor structure includes a substrate having thereon at least one conductive region; a plurality of cylinder-shaped electrodes disposed on the substrate, wherein each of the cylinder-shaped electrodes has a horizontal portion that is in direct contact with the at least one conductive region and a vertical sidewall portion connecting the horizontal portion; an upper support structure comprising a first lattice structure that is situated in a first horizontal level that is lower than a tip portion of each of the cylinder-shaped electrodes; and a lower support structure comprising a second lattice structure that interlocks middle portions of the cylinder-shaped electrodes.