Cylinder Bottom Electrode Segmentation for Capacitor Stability
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Solution Overview
Problem
As semiconductor device sizes decrease due to increased integration, it becomes challenging to fabricate capacitors with sufficient capacitance while avoiding the 'capacitor leaning phenomenon associated with increasing height in cylinder type capacitors.
Innovation Solution
The method involves forming cylinder type bottom electrodes connected to a contact plug over a semiconductor substrate, with a supporting pattern between the electrodes, where portions of the sidewalls are higher and lower than the supporting pattern, achieved through a series of sacrificial insulating film and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the height of the capacitor is increased to secure sufficient capacitance, then the capacitance is improved, but the capacitor leaning phenomenon occurs
Solution Approach 1:
The bottom electrode is divided into multiple segments along the height direction, with supporting patterns positioned between adjacent bottom electrodes. This segmentation prevents the capacitor leaning phenomenon by providing structural support at multiple levels while maintaining sufficient capacitance through the combined electrode surface area.
Solution Approach 2:
Supporting patterns are introduced as intermediary structures between the bottom electrode and the dielectric film. These supporting patterns act as mediators that prevent direct contact between adjacent bottom electrodes, thereby preventing the capacitor leaning phenomenon while allowing the bottom electrode to maintain sufficient height for adequate capacitance.
2Productivity
If the device size is reduced due to increased integration, then the productivity is improved, but it becomes difficult to fabricate a capacitor with sufficient capacitance
Solution Approach 1:
The bottom electrode transitions from a planar structure to a three-dimensional structure with increased height. By utilizing the vertical dimension, the electrode surface area is significantly increased within the same planar footprint, enabling sufficient capacitance in highly integrated devices without increasing the device area.
Solution Approach 2:
Multiple functional layers are nested within the vertical structure: the bottom electrode, supporting patterns, dielectric film, and top electrode are arranged in a nested configuration. This nesting allows maximum utilization of the vertical space to achieve high capacitance density within a compact device footprint.
Data Source
AI summary
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes cylinder type bottom electrodes connected to a contact plug formed over a semiconductor substrate, and a supporting pattern formed between the cylinder type bottom electrodes, wherein a portion of sidewalls of the bottom electrodes is higher than the supporting pattern and the other portion of the sidewalls of the bottom electrode is lower than the supporting pattern.