Cylindrical Bottom Electrode Stabilization in DRAM Capacitors

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Solution Overview

Problem

In semiconductor devices, particularly DRAM, achieving high capacitance while maintaining a compact footprint is challenging due to the instability of cylindrical bottom electrodes with high aspect ratios, which can collapse or break before dielectric material deposition.

Innovation Solution

A semiconductor memory device with a supporting base that includes alternating patterns of open areas to stabilize cylindrical bottom electrodes, allowing them to stand vertically and maintain structural integrity during dielectric material deposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the height of cylindrical bottom electrode is increased to secure capacitance, then capacitance is improved, but structural stability deteriorates causing collapse or break before dielectric material deposition

Engineering Contradiction:

ImprovecapacitanceVSAvoidstructural stability

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

The supporting base is divided into multiple patterns (first patterns and second patterns) with different oriented shapes that are alternately arranged. This segmentation provides distributed support points along the cylindrical bottom electrode, preventing collapse while maintaining the electrode's height and capacitance

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The supporting base with its patterned structure is formed before dielectric material deposition. This preliminary action provides structural support to the high-aspect-ratio cylindrical bottom electrode in advance, preventing collapse during subsequent processing steps

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS8779549B2Semiconductor memory device having capacitor and semiconductor device

Publication Date: 2014.07.15 SAMSUNG ELECTRONICS CO LTD

AI summary

An example embodiment relates to a semiconductor memory device including a plurality of cylindrical bottom electrodes arranged in a first direction and in a second direction. The device includes a supporting base configured to support the plurality of cylindrical bottom electrodes by contacting side surfaces of the plurality of cylindrical bottom electrodes. The supporting base includes first patterns in which first open areas are formed, and second patterns in which second open areas are formed. The first patterns and the second patterns have different oriented shapes.