Cylindrical Fin Gate Structure With Single-Contact Bridge
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Solution Overview
Problem
Related art cylindrical field effect transistors require separate contacts for inner and outer gates, which is inefficient and costly.
Innovation Solution
A semiconductor device with a cylindrical fin structure featuring a recess that connects inner and outer gates through a conductor, eliminating the need for separate contacts by forming a continuous bridge between the gates using the same metal layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If separate contacts are used for inner and outer gates in related art cylindrical FETs, then each gate can be independently controlled, but the device complexity and manufacturing cost increase
Solution Approach 1:
The patent merges the inner and outer gates into a single integrated gate structure, eliminating the need for separate contacts. The gate is formed as one continuous component that provides independent control regions through internal segmentation rather than requiring separate external contacts, thus reducing device complexity while maintaining operational independence.
Solution Approach 2:
The single gate structure serves multiple functions by providing both inner and outer gate control regions within one component. This universal gate design allows the same structure to perform multiple control functions that previously required separate dedicated contacts, reducing the overall number of components needed.
2Reliability
If separate contacts are used for inner and outer gates, then gate control is achieved, but manufacturing time and cost increase
Solution Approach 1:
By combining the inner and outer gates into a single manufactured component, the patent reduces the number of separate fabrication steps and assembly operations required. This merging approach maintains full gate control functionality while significantly reducing manufacturing time and associated costs.
3Device complexity
If a single metal layer is used to form the conductive bridge, then material cost and process complexity are reduced, but electrical connection reliability must be maintained
Solution Approach 1:
The single metal layer performs multiple functions simultaneously: it forms the conductive bridge connecting the gate to the contact, provides electrical pathways for both inner and outer gate control, and serves as the interconnect structure. This multi-functional use of one material layer maintains electrical connection reliability while reducing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution merges the inner and outer gates, reducing the need for separate contacts and saving time and money by using a single metal layer to form a conductive bridge between the gates, ensuring effective electrical connection.
Implementation Method 1
a conductor formed in the recess and connecting the inner and outer gates
Data Source
AI summary
A semiconductor device including a fin structure including a recess, a first gate formed in the recess of the fin structure, and a second gate formed outside the fin structure.