Cylindrical Master Mold for Stitching-Free Lithography Masks
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Solution Overview
Problem
Existing methods for manufacturing lithography masks using rotatable masks often result in replicas with stitching lines due to the use of polymer films, which is undesirable for nanostructuring applications.
Innovation Solution
A master mold with patterned features protruding from its interior surface, such as porous alumina or epitaxial layers, or self-assembled monolayers of nanospheres or quantum dots, is used to create replicas without stitching lines, allowing for precise nanostructuring and patterning in lithography masks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If polymer films are used to manufacture lithography masks using rotatable masks, then the masks can be produced with desired patterns, but stitching lines appear in the replicas which degrades the quality for nanostructuring applications
Solution Approach 1:
The patent extracts and eliminates the problematic polymer film material from the mask manufacturing process. Instead of using polymer films that create stitching lines, the invention uses alternative materials and methods (such as direct writing, e-beam lithography, or other stitching-free patterning techniques) to create the master mask patterns, thereby removing the source of stitching line defects while preserving the desired pattern fidelity
Solution Approach 2:
The patent changes the fundamental parameters of the mask manufacturing process by abandoning the rotatable mask with polymer film approach. It transitions to different fabrication methods with different material parameters, process parameters, and structural parameters that inherently prevent stitching line formation, thus resolving the contradiction between pattern fidelity and stitching line elimination
2Manufacturing precision
If conventional lithography methods are used, then manufacturing processes are relatively simple, but achieving nanostructuring precision below 100 nanometers becomes difficult
Solution Approach 1:
The patent replaces conventional mechanical lithography methods with advanced techniques such as e-beam direct writing or other precision patterning methods. These substituted methods use different physical principles (electron beam interaction, field-based patterning) instead of traditional mechanical contact or optical projection, enabling sub-100nm precision while accepting increased process complexity as a necessary trade-off for achieving the required nanostructuring capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the production of lithography masks with features ranging from 1 nanometer to 1000 nanometers without stitching lines, enhancing the precision and efficiency of nanostructuring in applications like solar cells, LEDs, and data storage devices.
Implementation Method 1
The radiation-sensitive material will fill in the pores that are formed in the structured porous material
Implementation Method 2
The radiation-sensitive material may then be developed by exposing the exterior of the cylinder with a light source
Implementation Method 3
PDMS is transparent to UV light with wavelengths greater than 300 nm. Passing light from a mercury lamp (where the main spectral lines are at 355-365 nm) through the PDMS
Implementation Method 4
a phase mask may be formed with a depth of relief that is designed to modulate the phase of the transmitted light by π radians. As a result of the phase modulation, a local null in the intensity appears at step edges in the relief pattern formed on the mask
Implementation Method 5
Bringing an elastomeric phase mask into contact with a thin layer of radiation-sensitive material causes the radiation-sensitive material to 'wet' the surface of the contact surface of the mask. Generalized adhesion forces guide this process
Data Source
AI summary
Aspects of the present disclosure describe cylindrical molds that may be used to produce cylindrical masks for use in lithography. A structured porous layer may be deposited on an interior surface of a cylinder. A radiation-sensitive material may be deposited over the porous layer in order to fill pores formed in the layer. The radiation-sensitive material in the pores may be cured by exposing the cylinder with a light source. The uncured resist and porous layer may be removed, leaving behind posts on the cylinder's interior surface. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.