CZT Multilayer Inductor Integration on Semiconductor Substrates

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Solution Overview

Problem

Traditional discrete inductors are bulky, consume significant power, and occupy large space on printed circuit boards, making them unsuitable for the miniaturization of electronic devices without compromising electrical performance.

Innovation Solution

Integration of cobalt-zirconium-tantalum (CZT) multilayers on semiconductor substrates to form inductors, using a process that includes deposition of metal and oxidized CZT layers, patterning, etching, and dielectric cap formation to create a stairstep pattern and inductor coils, which reduces size and power consumption while maintaining performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If discrete inductors are used, then electrical performance is maintained, but device size and power consumption increase

Engineering Contradiction:
Improveelectrical performanceVSAvoiddevice size
Core Design Contradiction:
ReliabilityVSVolume of moving object

Solution Approach 1:

The patent merges the inductor with the IC chip substrate, integrating the inductor structure directly into the semiconductor device rather than using separate discrete components. This is achieved by forming inductor coils and magnetic core structures on the same substrate as the IC circuit, eliminating the need for separate inductor components and their associated mounting hardware.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent implements nesting by placing the inductor structure inside or within the IC chip package. The inductor coils are formed on the substrate, and magnetic core materials are deposited over specific regions to create a nested configuration where the magnetic core is contained within the overall device footprint, maximizing space utilization.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If discrete inductors are used, then electrical performance is maintained, but power consumption increases

Engineering Contradiction:
Improveelectrical performanceVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The integration of the inductor with the IC chip allows for optimized electrical connections with minimal parasitic inductance and resistance. The direct integration eliminates trace inductance and contact resistance associated with discrete components, reducing overall power losses and improving electrical performance.

Inventive Principle:
Principle #5Merging (Combining)

3Volume of moving object

If inductors are integrated into IC chips, then device size is reduced, but manufacturing complexity increases

Engineering Contradiction:
Improvedevice sizeVSAvoidmanufacturing complexity
Core Design Contradiction:
Volume of moving objectVSDevice complexity

Solution Approach 1:

The inductor structure is segmented into distinct functional layers: conductor layers forming the coils, dielectric layers providing insulation and support, and magnetic core layers enhancing inductance. Each layer is formed through separate deposition and patterning steps, allowing for independent optimization and simplified manufacturing control.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from planar inductor designs to three-dimensional structures by stacking multiple conductor and magnetic core layers vertically. This vertical integration reduces the horizontal footprint while maintaining or enhancing inductance, effectively using the third dimension to solve the size-complexity tradeoff.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

4Area of stationary object

If inductor footprint is reduced, then device integration is improved, but electrical performance may be compromised

Engineering Contradiction:
Improveinductor footprintVSAvoidelectrical performance
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent uses vertical stacking of multiple conductor layers and magnetic core layers to increase inductance within a reduced horizontal footprint. The multi-layer configuration allows the magnetic flux to be confined and enhanced in the vertical direction, maintaining high inductance values without requiring large planar areas.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent employs composite structures combining conductor materials (such as copper or aluminum), dielectric materials (such as silicon dioxide or silicon nitride), and magnetic core materials (such as ferrite or permalloy). This composite approach allows for optimized electrical and magnetic properties within a compact footprint, achieving high inductance with minimal area.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The approach enables the integration of inductors into IC chips, reducing size, power consumption, and footprint while enhancing inductance and structural integrity, thus addressing the need for miniaturization without sacrificing electrical performance.

Implementation Method 1

forming a first cobalt-zirconium-tantalum (CZT) layer and a second CZT layer over a semiconductor substrate

Methodology Applied
Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 2

an inductor is a passive electrical component that can store energy in a magnetic field created by an electric current passing through it

Methodology Applied
Scientific EffectElectromagnetic Induction: Electromagnetic Induction

Data Source

PatentUS10868106B2Semiconductor structure and method
Publication Date: 2020.12.15 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US10868106B2 patent drawing
  • US10868106B2 patent drawing
  • US10868106B2 patent drawing

AI summary

A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.