DBC Clip With Partially Etched Channels For Semiconductor Thermal Dissipation
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Solution Overview
Problem
Current semiconductor packages face challenges in efficiently dissipating heat from semiconductor die, which can lead to thermal performance issues and reduced reliability.
Innovation Solution
The implementation of direct bond copper (DBC) clips with partially etched channels in a copper layer directly bonded to ceramic layers, allowing for dual-sided cooling and improved thermal dissipation by aligning channels with the width and location of spaces between semiconductor die.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional cooling methods are used for semiconductor die, then the package structure remains simple, but thermal performance is insufficient leading to heat dissipation issues
Solution Approach 1:
The copper layer is segmented by etching channels through it, creating multiple heat dissipation pathways. This segmentation allows heat to be conducted away through distributed channels rather than relying on a simple bulk copper structure, significantly improving thermal performance while maintaining a relatively compact package structure.
Solution Approach 2:
The copper layer with etched channels creates a porous-like structure that enhances heat dissipation. The channels act as pathways for heat conduction and can also accommodate thermal interface materials, improving the overall thermal management capability of the package without requiring a completely redesigned structure.
2Loss of energy
If clips are made without etched channels, then manufacturing is simpler, but heat dissipation from semiconductor die is insufficient
Solution Approach 1:
The copper layer is divided into multiple sections by etching channels through it. This segmentation creates efficient heat dissipation pathways that conduct heat away from the semiconductor die effectively. The channel geometry can be optimized to balance thermal performance with manufacturing complexity.
Solution Approach 2:
The etching process changes the physical parameters of the copper layer by creating channels with specific dimensions, depths, and patterns. These parameter changes enable enhanced heat dissipation while the etching process itself is a standard manufacturing technique that can be integrated into existing fabrication workflows.
3Loss of energy
If channels are fully etched through the copper layer, then heat dissipation is maximized, but structural integrity and electrical connectivity may be compromised
Solution Approach 1:
Instead of fully etching channels through the entire copper layer thickness, the channels are etched to a partial depth that provides sufficient heat dissipation pathways while leaving the copper layer intact at the bottom. This partial etching approach maintains structural integrity and electrical connectivity while achieving the necessary thermal management performance.
Solution Approach 2:
The etched channels are strategically positioned in specific locations where heat dissipation is most needed, rather than uniformly distributing them throughout the entire copper layer. This localized approach optimizes thermal performance in critical areas while preserving the overall structural strength and electrical functionality of the clip.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances thermal performance by up to 30% and increases the reliability and yield of semiconductor packages during manufacturing.
Implementation Method 1
a first copper layer directly bonded to a first side of a ceramic layer, a second copper layer directly bonded to a second side of the ceramic layer
Implementation Method 2
a plurality of channels partially etched into a thickness of the second copper layer. The plurality of channels may be configured to dissipate heat from a plurality of semiconductor die
Implementation Method 3
The clip may be a direct bond copper (DBC) clip
Data Source
AI summary
Implementations of a clip may include a first copper layer directly bonded to a first side of a ceramic layer, a second copper layer directly bonded to a second side of the ceramic layer, the second side of the ceramic layer opposite the first side of the ceramic layer, and a plurality of channels partially etched into a thickness of the second copper layer.