Direct Bond Hybridization Contact Deformation Moat
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Solution Overview
Problem
Current direct bond hybridization methods for infrared detectors require oxide deposition and polishing, which can contaminate equipment when used for compound semiconductor detectors, and often necessitate planarization and intermediate layers, limiting versatility and cleanliness.
Innovation Solution
A direct bond hybridization method involving self-aligned first and second contacts, where one contact is more ductile and sits in an oversized aperture or moat, allowing deformation and expansion during bonding without intervening portions, using thermal oxide layers and isostatic pressing, enabling bonding without planarization and equipment contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide deposition and polishing operations are used to create a planar surface with recessed contacts, then bonding success is improved, but equipment contamination increases and process complexity increases
Solution Approach 1:
The patent extracts and eliminates the oxide deposition and polishing operations from the bonding process. By using direct bonding of metal contacts without requiring planarized oxide surfaces, the harmful contamination effects are removed while maintaining bonding reliability through the ductile contact deformation mechanism
Solution Approach 2:
The patent introduces a ductile contact material as an intermediary element between the two bonding surfaces. This softer contact material deforms during bonding to accommodate surface irregularities, serving as a mediator that enables reliable bonding without requiring precise planarization or oxide layers
2Reliability
If oxide deposition and polishing operations are used to create a planar surface, then bonding success is improved, but process complexity increases
Solution Approach 1:
The patent removes the complex oxide deposition and chemical mechanical polishing (CMP) steps from the process flow. The simplified approach uses direct metal-to-metal bonding with ductile contact deformation, eliminating multiple processing stages while achieving reliable bonds
Solution Approach 2:
The patent changes the material parameter of the contact, making it ductile and softer than the opposing contact surface. This parameter change allows the contact to deform plastically during bonding, compensating for surface irregularities without requiring planarization processes
3Reliability
If intermediate layers are used in the bonding process, then bonding reliability is improved, but device complexity increases
Solution Approach 1:
The patent extracts and eliminates intermediate bonding layers from the structure. By using direct bonding between metal contacts where the softer contact deforms to accommodate surfaces, reliable bonding is achieved without adding intermediate material layers
Solution Approach 2:
The ductile contact material serves itself by deforming under bonding pressure to create intimate contact with the opposing surface. This self-adjusting mechanism eliminates the need for intermediate layers to facilitate bonding, as the contact material itself accommodates surface variations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for contamination-free bonding and operation in various foundries, eliminating the need for planarization and intermediate layers, ensuring effective electrical communication and device assembly without compromising equipment integrity.
Implementation Method 1
the second contact deforms and expands into the moat
Implementation Method 2
The first and second contact layers include thermal oxide
Implementation Method 3
the bonding includes isostatic pressing (IP)
Data Source
AI summary
A direct bond hybridization (DBH) method is provided. The DBH method includes preparing a first underlying layer, a first contact layer disposed on the first underlying layer and a first contact electrically communicative with the first underlying layer and protruding through the first contact layer, preparing a second underlying layer, a second contact electrically communicative with the second underlying layer and formed of softer material than the first contact and a second contact layer disposed on the second underlying layer and defining an aperture about the second contact and a moat at least partially surrounding the second contact and bonding the first and second contact layers whereby the first contact contacts the second contact such that the second contact deforms and expands into the moat.