DC Assisted RF Plasma Control for Semiconductor Etching
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Solution Overview
Problem
Current semiconductor processing systems face challenges in achieving uniformity and control over plasma characteristics, which affect the quality of film deposition and etching as integrated circuit technology scales down, particularly due to limitations in equipment delivering precursors and forming plasma profiles.
Innovation Solution
The system incorporates a process chamber with a lid assembly, grid electrode, conductive insert, and ground electrode, coupled with power supplies to create and tune plasmas using RF and DC power, allowing for adjustable ion and electron flux to enhance etching operations and plasma control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional RF power supplies are used for plasma generation, then plasma can be formed, but control over plasma profiles and characteristics is insufficient
Solution Approach 1:
The plasma generation system is segmented into multiple independent power supply channels: an RF power supply for generating plasma and a DC power supply for controlling plasma characteristics. This segmentation allows independent optimization of plasma formation and plasma profile control, resolving the contradiction between achieving plasma formation and obtaining precise control over plasma characteristics.
Solution Approach 2:
The invention introduces DC power as a new parameter to control plasma characteristics alongside the traditional RF power. By independently adjusting DC power levels, the system can modify electron temperature, ion flux, and plasma density without affecting plasma generation, thereby achieving precise control over plasma profiles while maintaining ease of operation.
2Manufacturing precision
If equipment delivers precursors in conventional manner, then processing can proceed, but uniformity and quality of precursors and plasma species deteriorate as technology scales down
Solution Approach 1:
By introducing DC power control, the system can adjust plasma parameters such as electron temperature and ion flux to compensate for challenges arising from technology scaling. This allows the equipment to maintain uniformity and quality of precursors and plasma species across different scaling conditions, improving adaptability while preserving manufacturing precision.
3Manufacturing precision
If single power supply system is used, then system complexity is reduced, but control over ion and electron flux is limited
Solution Approach 1:
The power supply system is divided into two independent channels: RF power supply for plasma generation and DC power supply for flux control. This segmentation enables precise control over ion and electron flux by independently adjusting DC power without affecting plasma generation, achieving high manufacturing precision while keeping each power supply module relatively simple.
Solution Approach 2:
The dual power supply system provides multi-functionality: the RF power supply handles plasma generation while the DC power supply handles flux control. This universal approach allows a single system to perform multiple functions that would otherwise require separate equipment, balancing enhanced control capabilities with manageable system complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration provides improved control over plasma profiles, enabling more precise etching operations by adjusting etch chemistry and selectivity, thus addressing the challenges of scaling down in semiconductor technology.
Implementation Method 1
Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber
Implementation Method 2
The first power supply may be an RF power supply
Implementation Method 3
The second power supply may be a DC power supply
Data Source
AI summary
Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.