DC Insulation Semiconductor Relay Device with Voltage Multiplication
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Solution Overview
Problem
Conventional semiconductor relay devices face challenges in achieving direct current insulation, universal connectivity, and stable operation under low driving voltage, leading to increased costs and limited compatibility with various control panel types.
Innovation Solution
A semiconductor relay device with a signal input unit, a direct current insulation member, and a voltage multiplying circuit that uses two metal-oxide semiconductor field-effect transistors connected in reverse series, allowing for bidirectional ON-Off operations and stable actuation, while reducing costs and enhancing compatibility with different control panel types.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a photo MOS relay with optical system is used to achieve DC insulation, then input and output are electrically insulated, but the device requires light shielding resinous material to block external light, increasing cost
Solution Approach 1:
The patent replaces the optical system (light-based mechanism) with an electrical isolation mechanism using a capacitor. Instead of using light shielding materials to block external light interference, the invention uses a capacitor to achieve DC insulation while maintaining AC signal transmission, thereby eliminating the need for costly light shielding resinous material and simplifying the manufacturing process
Solution Approach 2:
The patent changes the operating parameters by using a capacitor with specific capacitance value to block DC components while allowing AC signals to pass through. This parameter-based approach (selecting appropriate capacitance) achieves DC insulation without requiring physical light shielding structures, reducing manufacturing complexity and cost
2Reliability
If conventional semiconductor relay device is used, then DC insulation is achieved, but compatibility with various control panel types (GND common type, electric power source common type) is limited
Solution Approach 1:
The patent achieves universal compatibility with different control panel types (GND common type, electric power source common type, and isolated type) by using a capacitor-based DC insulation approach. The capacitor blocks DC components regardless of the reference potential configuration, allowing the relay device to be universally connected to various control panel types without requiring type-specific design modifications
Solution Approach 2:
The capacitor acts as an intermediary element between the signal input unit and the relay circuit. It provides DC insulation while allowing AC signals to pass through, serving as a universal interface that works with different control panel types without requiring direct electrical connection or common reference potentials
3Use of energy by moving object
If driving voltage of microcomputer is lowered to reduce power consumption, then power consumption is reduced, but stable driving of MOSFET becomes difficult
Solution Approach 1:
The patent employs an AC signal (oscillating voltage) to drive the MOSFET gate instead of a static low voltage. The AC signal creates oscillating electric field that effectively controls the MOSFET switching, allowing stable operation even when the microcomputer operates at low voltage. The oscillating nature of the AC signal compensates for the low voltage level, maintaining reliable MOSFET control
Solution Approach 2:
The patent changes the voltage application mode from static DC voltage to dynamic AC voltage. By applying AC voltage with appropriate amplitude and frequency to the MOSFET gate, the system achieves stable MOSFET operation at low microcomputer driving voltages. The AC signal's time-varying nature provides sufficient gate control despite reduced power supply voltage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves reliable operation and universal connectivity by ensuring direct current insulation and voltage multiplication, reducing costs and minimizing noise generation, thus addressing the limitations of conventional devices.
Implementation Method 1
a direct current insulation member (3) for blocking a direct current of the alternating signal
Implementation Method 2
A semiconductor relay device with a direct current insulation member, such as a capacitor or transformer
Implementation Method 3
a voltage multiplying circuit (5) for multiplying by an integer number a signal voltage after the blocking of the direct current
Data Source
AI summary
A semiconductor relay device (1) includes a signal input unit (2) for inputting an alternating current signal for relay driving purpose, a direct current insulation member (3) for blocking a direct current electricity of the alternating current signal, a voltage multiplying circuit (5) for multiplying the signal voltage, after the direct current electricity has been blocked, by an integer number, and a relay circuit (4) including two metal-oxide semiconductor field-effect transistors (6, 7) having respective sources connected with each other and connected in a reverse series with each other and also having respective gates connected with each other. Those metal-oxide semiconductor field-effect transistors (6, 7) are caused to undergo a bidirectional ON-Off operation when the respective gates of those metal-oxide semiconductor field-effect transistors (6, 7) are brought into a conducting state by a signal of which voltage has been multiplied by the voltage multiplying circuit (5).