DC Voltage Control on RF-Powered Electrode via PFSP Ring
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving precise processing of smaller devices due to the limitations of existing capacitively coupled plasma processing systems, which require more sophisticated control over plasma processing parameters.
Innovation Solution
A method is introduced that includes configuring a plasma processing system with a conductive coupling ring and a plasma-facing-substrate-periphery (PFSP) ring, coupled to a DC control module, which provides a conductive path to control plasma processing parameters such as mean ion energy and plasma density by using a DC power source, filter, and variable resistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional capacitively coupled plasma processing systems are used, then basic substrate processing can be performed, but precise control over plasma processing parameters is insufficient for processing smaller devices
Solution Approach 1:
The system is segmented into multiple independent control zones: the substrate electrode, the PFSP ring, and the coupling ring are controlled separately through independent DC power sources. This segmentation allows precise control of plasma parameters in different regions, enabling sophisticated processing of smaller devices while maintaining overall system versatility
Solution Approach 2:
The system incorporates variable DC power sources with adjustable voltage and current parameters that can be dynamically changed during processing. The variable resistor allows real-time adjustment of the conductive path characteristics, providing adaptive control over plasma density and ion energy to meet different processing requirements
2Manufacturing precision
If DC control module with multiple power sources is added to enhance control capability, then precise processing is achieved, but system complexity increases
Solution Approach 1:
The coupling ring acts as an intermediary component that provides a controlled conductive path between the substrate electrode and the DC control module. This intermediary structure enables precise DC voltage application to the PFSP ring while isolating the complexity of the control electronics from the plasma generation region, thus achieving precise control without proportionally increasing overall system complexity
Solution Approach 2:
The DC control module is designed with multiple power sources that can serve different functions: one power source controls the substrate electrode while another controls the PFSP ring. This multi-functionality allows a single control module to handle multiple processing parameters, reducing the need for separate control systems and thereby limiting the increase in system complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances control over plasma processing parameters, allowing for more precise and uniform processing beyond traditional limits, improving process uniformity and reducing costs for manufacturing companies.
Implementation Method 1
configuring at least one radio frequency (RF) power source to ignite plasma between the upper electrode and the lower electrode
Implementation Method 2
The conductive coupling ring is coupled to the lower electrode to provide a conductive path
Implementation Method 3
coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter
Data Source
AI summary
In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.