Dual Damascene Silicon Nitride Process Particle Reduction
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Solution Overview
Problem
In the Dual Damascene Silicon Nitride (DDSN) process, copper oxide (CuO) formation damages adhesion between copper and the DDSN thin film, leading to reliability issues and particle gathering in the process chamber, particularly on the showerhead, due to hydrogen and fluorine ion corrosion, which shortens equipment life and increases maintenance.
Innovation Solution
A method involving NH3 pre-treatment under plasma to reduce CuO, followed by N2O plasma treatment to remove residual hydrogen and fluorine ions, ensuring effective CuO removal and suppressing chamber corrosion, including steps like forming a copper seed layer, depositing and planarizing copper, generating an etching block layer, cleaning with NF3, and using N2O to neutralize remaining ions in the DDSN process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If NH3 pre-treatment is carried out to remove copper oxide, then copper oxide removal is effective, but hydrogen ion corrosion of the process chamber surface occurs causing particle gathering
Solution Approach 1:
The patent introduces N2O as an intermediary substance to neutralize the harmful hydrogen ions and fluorine ions generated during NH3 pre-treatment and NF3 cleaning processes. The N2O reacts with these ions to form harmless byproducts, thereby eliminating the corrosion of the process chamber surface while preserving the beneficial CuO removal effect of the NH3 treatment.
Solution Approach 2:
The patent converts the harmful hydrogen ions and fluorine ions, which cause chamber corrosion and particle generation, into beneficial neutralizing agents through reaction with N2O. This transforms the harmful corrosion effect into a protective mechanism that maintains chamber integrity while still achieving effective CuO removal.
2Manufacturing precision
If NF3 cleaning is performed to clean the process chamber, then cleaning effectiveness is improved, but fluorine ion corrosion of the showerhead occurs causing particle gathering
Solution Approach 1:
The patent introduces N2O as an intermediary substance to neutralize the harmful fluorine ions generated during NF3 cleaning processes. The N2O reacts with these ions to form harmless byproducts, thereby eliminating the corrosion of the process chamber surface while preserving the beneficial cleaning effect of the NF3 treatment.
Solution Approach 2:
The patent converts the harmful fluorine ions, which cause chamber corrosion and particle generation, into beneficial neutralizing agents through reaction with N2O. This transforms the harmful corrosion effect into a protective mechanism that maintains chamber integrity while still achieving effective cleaning.
3Reliability
If repeated NH3 and NF3 treatments are performed, then CuO removal and cleaning effectiveness improve, but chamber corrosion accumulates shortening equipment life
Solution Approach 1:
The patent introduces N2O as an intermediary substance to neutralize the harmful hydrogen ions and fluorine ions generated during repeated NH3 pre-treatment and NF3 cleaning processes. This prevents cumulative corrosion damage to the process chamber, thereby extending equipment service life while maintaining consistent process quality.
Solution Approach 2:
The patent applies N2O treatment as a protective measure before corrosion damage can accumulate. By neutralizing harmful ions in advance, the system prevents progressive degradation of the process chamber, thereby extending equipment lifespan while maintaining process reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively removes CuO to ensure film adhesion and reduces particle gathering, prolonging process chamber life and reducing maintenance needs by suppressing corrosion and maintaining a clean chamber environment.
Implementation Method 1
performing a pre-treatment on a surface of the deposition layer of copper using NH3 gas under a plasma condition so as to remove oxides of copper formed on the deposition layer of copper
Implementation Method 2
the CuO can be removed by using hydrogen ion (H+) to reduce the copper oxide (CuO) to the copper (Cu)
Implementation Method 3
directing N2O gas into the reaction chamber and removing remaining hydrogen and fluorine in the reaction chamber using the N2O gas under the plasma condition
Data Source
AI summary
A treatment method for reducing particles in a Dual Damascene Silicon Nitride (DDSN) process, including the following steps: forming a seed layer of copper on a silicon wafer; depositing a deposition layer of copper to cover the seed layer of copper; planarizing the deposition layer of copper; providing the silicon wafer into a reaction chamber and performing a pre-treatment on a surface of the deposition layer of copper using NH3 gas under a plasma condition so as to reduce copper oxide (CuO) to copper (Cu) formed on the deposition layer of copper; in the reaction chamber, generating an etching block layer on the deposition layer of copper using a DDSN deposition process; cleaning the reaction chamber using NF3 gas; and directing N2O gas into the reaction chamber and removing the remaining hydrogen (H) and fluorine (F) in the reaction chamber using the N2O gas under the plasma condition.