Room Temperature Debonding Composition for Semiconductor Wafer Processing
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Solution Overview
Problem
Existing methods for thinning semiconductor device wafers and forming through-silicon vias fail to provide simultaneous grinding force resistance, heat resistance during anisotropic dry etching, chemical resistance during plating and etching, and smooth debonding at or near room temperature.
Innovation Solution
A debondable wafer stack is formed using a thermally stable polymer layer with a surface energy modifier material applied to the wafer or substrate, allowing for a strong bond that can be released at room temperature using mechanical force, while maintaining adhesion during processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a strong bond is formed between wafer and substrate to withstand processing forces, then grinding force resistance and heat resistance are improved, but debonding at room temperature becomes difficult
Solution Approach 1:
The patent applies a surface energy modifier material that changes the surface energy parameters of the wafer or substrate. This creates a bond that is strong under processing conditions (high temperature, mechanical stress) but can be easily broken at room temperature when surface energy is reduced, enabling both strong bonding and easy debonding
Solution Approach 2:
The patent uses a composite approach by combining a thermally stable polymer layer with a surface energy modifier material. The polymer provides thermal stability and strong bonding during processing, while the surface energy modifier enables easy debonding at room temperature by reducing surface energy
2Temperature
If conventional bonding materials are used to provide thermal stability during processing, then heat resistance is improved, but chemical resistance during plating and etching deteriorates
Solution Approach 1:
The patent employs a composite material system consisting of a thermally stable polymer layer combined with a surface energy modifier. This composite provides both the thermal stability needed for high-temperature processing and the chemical resistance required for plating and etching operations, overcoming the limitations of conventional single-material bonding layers
3Length of moving object
If wafer thickness is reduced to improve heat dissipation and electrical performance, then device performance is improved, but grinding force resistance deteriorates
Solution Approach 1:
The patent applies a bonding layer with high mechanical strength before the wafer thinning process. This layer acts as a cushioning support that compensates for the reduced structural strength of thinner wafers, allowing them to withstand grinding forces despite their reduced thickness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables smooth debonding of wafers at or near room temperature while withstanding wafer thinning and processing, ensuring effective grinding force, heat, and chemical resistance.
Implementation Method 1
a surface energy modifier material applied to the wafer or substrate, allowing for a strong bond that can be released at room temperature
Implementation Method 2
A debondable wafer stack is formed using a thermally stable polymer layer with a surface energy modifier material applied to the wafer or substrate
Data Source
AI summary
Embodiments in accordance with the present invention provide for materials, methods for using such materials and structures that both incorporate such materials and are made using such methods that can be smoothly debonded at or near room temperature while providing a fixable bond that allows for wafer processing such as wafer thinning, anisotropic dry etching and chemical resistance during plating and etching.