Decoupling Capacitor Vertical Stacking in Semiconductor Memory
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Solution Overview
Problem
There is a need for semiconductor devices that can implement high-capacity decoupling capacitors without increasing the size of the device, while also improving the characteristics of variable resistance elements and decoupling capacitors in electronic devices.
Innovation Solution
The solution involves designing an electronic device with a cell array region containing a first variable resistance element and a peripheral circuit region with a decoupling capacitor, where the decoupling capacitor is formed before the variable resistance element, allowing for increased surface area and improved noise filtering capabilities without increasing the device size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the decoupling capacitor is formed after the variable resistance element, then the device size is reduced, but the capacitor capacity and noise filtering capability are insufficient
Solution Approach 1:
The decoupling capacitor is positioned at a lower level than the variable resistance element, utilizing vertical stacking to increase capacitor capacity without increasing the planar footprint of the device. This dimensional reorganization allows the capacitor to occupy space in the vertical dimension rather than competing for horizontal space.
Solution Approach 2:
The decoupling capacitor is formed before the variable resistance element in the manufacturing process. This preliminary formation allows the capacitor structure to be established at a lower level first, creating space above it for the variable resistance element, thereby enabling both components to coexist within the same device footprint.
2Reliability
If the decoupling capacitor capacity is increased, then noise filtering is improved, but the device size increases
Solution Approach 1:
The invention transitions from planar expansion to vertical stacking by positioning the decoupling capacitor at a lower level than the variable resistance element. This allows the capacitor to achieve higher capacity through increased surface area in the vertical dimension without expanding the device's horizontal footprint.
3Reliability
If the variable resistance element characteristics are improved, then memory performance is enhanced, but manufacturing complexity increases
Solution Approach 1:
The decoupling capacitor is formed in advance at a lower level before the variable resistance element is created. This preliminary action simplifies the overall manufacturing process by establishing the capacitor structure first, allowing subsequent layers to be built upon it without requiring complex reconfiguration or additional manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the implementation of high-capacity decoupling capacitors that effectively filter noise and maintain the characteristics of the variable resistance elements, reducing leakage current and improving overall device performance.
Implementation Method 1
a decoupling capacitor including a bottom electrode, a dielectric layer pattern, and a top electrode
Implementation Method 2
the decoupling capacitor is coupled in the semiconductor memory to filter noise in a voltage applied to operate the first variable resistance element
Data Source
AI summary
Provided is an electronic device including a semiconductor memory which includes a cell array region having a first variable resistance element and a peripheral circuit region having a decoupling capacitor, the decoupling capacitor including a bottom electrode, a dielectric layer pattern, and a top electrode. The cell array region may include: a first gate; a first contact over the first gate; a second contact over an active region at one side of the first gate; and the first variable resistance element over the second contact, and the peripheral circuit region may include: a second gate formed of the same material at the same level as the first gate; the bottom electrode disposed over the second gate and formed at the same level as the first contact; and the dielectric layer pattern and the top electrode disposed over the bottom electrode.