Deep Electrode Pad Conductive Via for Wire Bonding
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Solution Overview
Problem
Conventional semiconductor devices with electrode pads at deep positions face challenges in wire bonding due to increased wire height, poor ultrasonic bonding, and difficulties in measuring shear strength, which complicates device miniaturization, especially in imaging devices where light reflection affects pixel characteristics.
Innovation Solution
A semiconductor device with electrode pads formed at a predetermined depth from the substrate surface, featuring a conductive portion that extends to the surface for electrical connection, allowing for improved bonding and reduced device size through the application and curing of conductive paste, enabling efficient electrical connection with surface wiring.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If electrode pads are located at a deep position from the surface, then connection with external wiring is achieved, but wire bonding becomes difficult due to increased wire height and poor ultrasonic bonding
Solution Approach 1:
The patent introduces a conductive portion that extends vertically from the deep electrode pad to the surface of the substrate, creating a multi-dimensional connection path. This allows the electrode pad to remain at a deep position for compact device structure while the conductive portion provides a surface-level bonding interface for wire bonding, effectively resolving the contradiction between deep electrode positioning and ease of wire bonding.
2Volume of moving object
If electrode pads are located at a deep position, then device size is reduced, but shear strength measurement becomes difficult
Solution Approach 1:
The conductive portion serves as an intermediary element between the deep electrode pad and the surface. It provides a accessible surface-level interface that enables proper shear strength measurement of the wire bond without requiring access to the deep electrode pad, thus maintaining compact device size while enabling accurate quality control measurements.
3Measurement precision
If aperture of electrode is widened for shear strength measurement, then measurement accuracy improves, but light reflection increases causing pixel characteristic problems
Solution Approach 1:
The conductive portion acts as an intermediary measurement interface, allowing shear strength measurement to be performed on the surface-level conductive portion rather than requiring aperture widening of the deep electrode pad. This eliminates the light reflection problem while maintaining measurement accuracy, as the measurement is performed on the conductive portion that does not interfere with optical paths in imaging devices.
Data Source
AI summary
To facilitate connection with an external wiring when an electrode pad is located at a deep position from a surface of a semiconductor device. The electrode pad is formed at a predetermined depth from the surface of the substrate. A conductive portion is formed in a region from the electrode pad to the surface of the substrate. The conductive portion has a state in which it can be electrically connected to the wiring on the surface of the substrate. The conductive portion includes a wiring region for electrical connection with a wiring at a position directly above the electrode pad on the surface of the substrate or at a position different from the position directly above the electrode pad. The conductive portion can be formed by repeating a procedure of applying a conductive paste to a region from the electrode pad to the surface of the substrate and a procedure of curing the applied conductive paste.