Deep Trench Capacitor Structure for Dense and Reliable Integration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in embedding electrical components within a semiconductive substrate to minimize space occupation and enhance integration density, requiring sophisticated techniques that need improvement.
Innovation Solution
A semiconductor structure is developed with a recess in the substrate, featuring a capacitor structure partially embedded within the recess, and an interconnect structure electrically connected to it, utilizing multiple electrode and dielectric layers to enhance reliability and integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If electrode layers are embedded into the substrate to reduce device size, then integration density is improved, but the electrode layers become vulnerable to damage and reliability deteriorates
Solution Approach 1:
The patent implements a multi-layer nested structure where the first electrode layer is enclosed by the first dielectric layer, which is in turn enclosed by the second electrode layer. This nested configuration protects the embedded first electrode layer while maintaining high integration density within the substrate recess.
Solution Approach 2:
The first dielectric layer serves as an intermediary protective barrier between the first electrode layer and the external environment. This dielectric intermediary prevents direct exposure of the electrode layer, thereby maintaining reliability while enabling embedding for improved integration density.
2Productivity
If multiple manufacturing processes are applied to reduce minimum feature size, then integration density is improved, but process complexity increases
Solution Approach 1:
The patent combines multiple functions into integrated structures: the capacitor structure integrates both electrode layers and dielectric layers in a single embedded unit, and the interconnect structure combines conductive layers with dielectric insulation. This merging reduces the number of separate manufacturing steps required while achieving high integration density.
Solution Approach 2:
The embedded capacitor structure serves multiple functions simultaneously: it provides electrical capacitance, acts as a placeholder for future interconnect routing, and enables planarization for subsequent processing layers. This multi-functionality reduces overall process complexity while maintaining high integration density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution increases the overall reliability of the semiconductor structure by protecting the first electrode layer from further etching and allows for more efficient integration of components, improving manufacturing processes.
Implementation Method 1
disposing a first electrode layer over the isolation layer; disposing a first dielectric over the first electrode layer; and disposing a second electrode layer to cover and surround the first dielectric and the first electrode layer
Implementation Method 2
forming a recess on a surface of a substrate
Data Source
AI summary
A semiconductor structure includes a substrate including a recess indented into the substrate, a capacitor structure at least partially disposed within the recess, and an interconnect structure disposed over and electrically connected to the capacitor structure. The capacitor structure includes a first electrode layer, a second electrode layer over the first electrode layer, and a first dielectric between the first electrode layer and the second electrode layer. The first electrode layer includes a first body portion disposed in and conformal to the recess and a first extending portion disposed on the substrate, and the second electrode layer covers the first dielectric, the first body portion and the first extending portion of the first electrode layer.