Deep Trench Capacitor Layout for High Capacitance and Yield
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Solution Overview
Problem
Conventional planar capacitor structures in semiconductor devices face challenges in providing the desired capacitance value required for AI and HPC applications while maintaining yield due to increased stress from deepening trenches.
Innovation Solution
The implementation of deep trench capacitor structures with misaligned partition portions in trenches reduces compressive stress by dividing trenches into multiple portions, allowing for deeper trenches and larger capacitance values.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the depth of trenches is increased to provide larger capacitance values, then the capacitance value is improved, but the stress increases and yield deteriorates
Solution Approach 1:
The trench structure is divided into multiple segments by introducing partition portions that extend from the top surface to the bottom of the trench. These partitions divide the continuous trench into separate sections, allowing the structure to accommodate deeper depths while reducing cumulative stress. The segmentation enables the trench to maintain structural integrity at greater depths without compromising yield.
2Quantity of substance
If the depth of trenches is increased to provide larger capacitance values, then the capacitance value is improved, but stress-related fractures increase
Solution Approach 1:
Partition portions are introduced to divide the deep trench into multiple shallower segments. Each segment experiences reduced stress compared to a continuous deep trench, thereby preventing stress-related fractures while maintaining the overall depth required for high capacitance values.
Solution Approach 2:
The partition portions are strategically positioned at specific locations within the trench to provide localized stress relief. By concentrating structural support at key positions rather than uniformly throughout, the design effectively mitigates stress accumulation and prevents fractures in critical regions.
3Reliability
If partition portions are misaligned between adjacent trenches, then stress is reduced and yield is improved, but the manufacturing complexity increases
Solution Approach 1:
The partition portions in adjacent trenches are intentionally misaligned rather than positioned at identical locations. This asymmetric arrangement disrupts stress propagation patterns and reduces cumulative stress across the device structure, improving yield despite the increased complexity in aligning and forming the partitions during manufacturing.
Data Source
AI summary
A semiconductor device includes a substrate, a first trench, a second trench and a capacitor structure. The substrate defines a first region. The first trench is disposed in the first region of the substrate and extends along a first direction. The first trench includes a first trench portion, a first partition portion and a second trench portion sequentially arranged along the first direction. The second trench is disposed in the first region of the substrate and extends along the first direction. The second trench includes a third trench portion, a second partition portion and a fourth trench portion sequentially arranged along the first direction. The first partition portion and the second partition portion are misaligned with each other in a second direction perpendicular to the first direction. The capacitor structure is disposed in the first trench and the second trench and on a top surface of the substrate.