Metal-Shielded Deep Trench Capacitor for Stable Output Voltage

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Solution Overview

Problem

Deep trench capacitors in semiconductor chips are susceptible to fluctuations in output voltage due to external electromagnetic radiation, which affects their stability.

Innovation Solution

A shielded deep trench capacitor structure is developed, featuring a conductive metallic substrate enclosure, deep trenches with alternating metallic electrode and dielectric layers, and a metallic shield structure that includes a backside metal layer and interconnect enclosure to block electromagnetic radiation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If deep trench capacitors are used to provide high capacitance with small device footprint, then capacitance density is improved, but susceptibility to electromagnetic radiation increases

Engineering Contradiction:
Improvecapacitance densityVSAvoidelectromagnetic radiation susceptibility
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

A metallic shield structure is introduced as an intermediary element between the deep trench capacitor and external electromagnetic radiation sources. The shield acts as a mediator that intercepts and redirects electromagnetic waves, preventing them from directly interacting with the capacitor electrodes and dielectric layers, thereby reducing susceptibility while maintaining high capacitance density

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The deep trench capacitor structure combines multiple materials with different electromagnetic properties - conductive metallic electrodes, dielectric materials, and metallic shield structures. This composite approach creates a multi-functional structure where each material contributes specific properties: the dielectric provides capacitance, the metals provide conductivity and electromagnetic shielding, achieving both high capacitance density and radiation resistance

Inventive Principle:
Principle #40Composite materials

2Object-affected harmful factors

If metallic shield structure is added to block electromagnetic radiation, then electromagnetic shielding is improved, but device complexity increases

Engineering Contradiction:
Improveelectromagnetic shieldingVSAvoidstructure complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The metallic shield structure is nested within the existing deep trench capacitor architecture, with shield layers positioned between the capacitor electrodes and the external environment. This nesting approach integrates shielding functionality into the existing structure without requiring separate shielding components, thereby improving electromagnetic protection while minimizing increases in overall device complexity

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The metallic elements in the deep trench capacitor serve multiple functions: they act as electrodes for capacitance storage and simultaneously provide electromagnetic shielding when configured as continuous or mesh structures. This multi-functionality reduces the need for additional dedicated shielding components, maintaining relatively simple device structure while achieving effective electromagnetic protection

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces or eliminates the adverse effects of external electromagnetic radiation on the output voltage stability of deep trench capacitors, enhancing their performance by providing electromagnetic shielding.

Implementation Method 1

a metallic shield structure that includes a backside metal layer and interconnect enclosure to block electromagnetic radiation

Methodology Applied
Scientific EffectElectromagnetic shielding: Faraday Cage

Data Source

PatentUS20230378154A1Shielded deep trench capacitor structure and methods of forming the same
Publication Date: 2023.11.23 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20230378154A1 patent drawing
  • US20230378154A1 patent drawing
  • US20230378154A1 patent drawing

AI summary

A moat trench laterally surrounding a device region is formed in a substrate. A conductive metallic substrate enclosure structure is formed in the moat trench. Deep trenches are formed in the substrate, and a trench capacitor structure is formed in the deep trenches. The substrate may be thinned by removing a backside portion of the substrate. A backside surface of the conductive metallic substrate enclosure structure is physically exposed. A backside metal layer is formed on a backside surface of the substrate and a backside surface of the conductive metallic substrate enclosure structure. A metallic interconnect enclosure structure and a metallic cap plate may be formed to provide a metallic shield structure configured to block electromagnetic radiation from impinging into the trench capacitor structure.