Deep Trench Intersection Layout for Uniform Filler Isolation
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Solution Overview
Problem
The existing technologies face challenges in efficiently filling deep trench features in semiconductor devices, particularly at trench intersections, which affects the ability of dielectric or conductive fill materials to effectively isolate components.
Innovation Solution
The semiconductor device incorporates a trench intersection design with linear trench segments and connector trench segments that connect these segments, ensuring efficient filling and isolation by maintaining specific width ratios and arced path configurations for the connector trench segments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional trench intersection designs are used, then fabrication process is simple, but fill material cannot efficiently fill the deep trench feature
Solution Approach 1:
The trench intersection is divided into multiple connector trench segments (first connector trench segment, second connector trench segment, third connector trench segment) that connect different linear trench segments. Each connector segment is designed with specific width relationships to the adjacent linear segments, enabling efficient fill material flow through the intersection while maintaining control over the complex geometry.
Solution Approach 2:
Different regions of the trench structure have different width characteristics. The connector trench segments have widths that are at least as great as the minimum of the widths of the two linear trench segments they connect, and no greater than the maximum of those widths. This local variation in width optimizes fill material distribution at each intersection point.
2Stress or pressure
If connector trench segments with inappropriate width are used, then trench structure is simple, but excess stress is generated in substrate
Solution Approach 1:
The width parameter of connector trench segments is carefully controlled within specific bounds. Each connector segment width is constrained to be at least as great as the minimum width of the two linear segments it connects, and no greater than the maximum width. This parameter control prevents excessive stress concentration while maintaining structural integrity.
Solution Approach 2:
The connector trench segments act as intermediary structures between linear trench segments of different widths. By providing transition zones with intermediate width values, these connectors smoothly bridge width differences, preventing abrupt transitions that would generate excess stress in the substrate.
3Adaptability or versatility
If linear trench segments with different widths are connected, then design flexibility is improved, but fill material distribution becomes inconsistent
Solution Approach 1:
The connector trench segments are designed with local width characteristics that match the adjacent linear segments. Each connector's width is specifically tailored to the widths of the linear segments it connects, creating a smooth transition that ensures consistent fill material distribution across regions with different trench widths.
Solution Approach 2:
By controlling connector trench widths to fall within the range defined by the minimum and maximum widths of connected linear segments, the patent creates a more homogeneous width profile throughout the trench structure. This reduces abrupt transitions and promotes uniform fill material distribution across the entire trench network.
Data Source
AI summary
A semiconductor device has a deep trench in a semiconductor substrate of the semiconductor device, with linear trench segments extending to a trench intersection. Adjacent linear trench segments are connected by connector trench segments that surround a substrate pillar in the trench intersection. Each connector trench segment has a width at least as great as widths of the linear trench segments connected by the connector trench segment. The deep trench includes a trench filler material. The deep trench may have three linear trench segments extending to the trench intersection, connected by three connector trench segments, or may have four linear trench segments extending to the trench intersection, connected by four connector trench segments.