Deep Trench Intersection Layout for Uniform Filler Deposition
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Solution Overview
Problem
In semiconductor devices, the intersection of dielectric or conductive deep trenches poses a challenge for efficient filling with trench fill materials, as the geometry of these intersections affects the ability of fill materials to uniformly fill the trench features.
Innovation Solution
The semiconductor device incorporates a trench intersection design with linear trench segments and connector trench segments that connect these segments, ensuring that the connector trench segments have widths that are within specific ranges relative to the linear trench segments, facilitating consistent trench filler material formation without excess stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If deep trenches intersect at right angles with uniform width, then the trench structure is simple to define, but the trench fill material cannot efficiently and uniformly fill the intersection region
Solution Approach 1:
The patent applies local quality by making the connector trench segments have different widths than the linear trench segments. Specifically, the connector trench segments have widths that are no greater than a maximum of the linear segment widths and at least as great as a minimum of the linear segment widths. This local variation in width allows the trench fill material to uniformly fill both the linear segments and the intersection regions, resolving the contradiction between simple trench definition and uniform filling.
2Ease of manufacture
If connector trench segments have widths outside the specified range, then the trench structure can be formed, but excess stress is introduced in the trench filler material
Solution Approach 1:
The patent applies parameter changes by precisely controlling the width parameter of the connector trench segments. The widths are set within a specific range: no greater than a maximum of the linear segment widths and at least as great as a minimum of the linear segment widths. This parameter optimization ensures that the trench filler material experiences minimal stress while maintaining proper structural formation, resolving the contradiction between ease of formation and reliability.
3Productivity
If the trench intersection geometry is not optimized, then fabrication is simpler, but the trench fill material formation is inconsistent and inefficient
Solution Approach 1:
The patent applies segmentation by dividing the trench structure into distinct components: linear trench segments and connector trench segments. The connector segments specifically connect the linear segments at intersections and have optimized widths within a defined range. This segmentation allows for efficient and consistent trench fill material formation in both linear and intersection regions, while the structured approach keeps the overall device complexity manageable.
Data Source
AI summary
A semiconductor device has a deep trench in a semiconductor substrate of the semiconductor device, with linear trench segments extending to a trench intersection. Adjacent linear trench segments are connected by connector trench segments that surround a substrate pillar in the trench intersection. Each connector trench segment has a width at least as great as widths of the linear trench segments connected by the connector trench segment. The deep trench includes a trench filler material. The deep trench may have three linear trench segments extending to the trench intersection, connected by three connector trench segments, or may have four linear trench segments extending to the trench intersection, connected by four connector trench segments.