Deep Trench Isolation With High-k Film for Substrate Leakage
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Solution Overview
Problem
The challenge of forming reliable semiconductor devices with smaller sizes is exacerbated by the increasing complexity and cost of fabrication processes as feature sizes decrease, necessitating improved manufacturing methods to reduce costs and improve reliability.
Innovation Solution
The use of a high-k (HK) film in deep trench and through substrate via structures to form semiconductor structures, which reduces substrate leakage and integrates easily into wafer-on-wafer packaging processes, thereby reducing costs and maintaining performance without penalties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency increases and costs decrease, but fabrication process complexity and difficulty increase
Solution Approach 1:
The fabrication process is divided into multiple sequential stages: forming first and second trenches at different depths, selective epitaxial growth in specific regions, and staged doping processes. This segmentation allows complex structures to be built through manageable, repeated operations rather than attempting to create all features simultaneously.
Solution Approach 2:
The method performs preliminary actions by first forming the deep trench isolation structure and performing epitaxial growth before subsequent doping and filling operations. The selective epitaxial growth prepares specific regions in advance for later doping, ensuring that complex structures are ready for subsequent processing steps.
2Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency increases and costs decrease, but manufacturing reliability deteriorates
Solution Approach 1:
The patent applies different material properties and processing conditions to different regions of the semiconductor structure. Selective epitaxial growth creates high-quality crystalline regions only where needed, while deep trench isolation provides electrical separation in specific areas. This local optimization ensures reliable device performance without requiring uniform high-quality materials throughout the entire structure.
Solution Approach 2:
The deep trench isolation structure acts as an intermediary element that electrically separates different regions of the semiconductor device. This isolation structure mediates between adjacent transistor regions, preventing unwanted electrical interactions and ensuring reliable device operation at scaled dimensions.
3Object-generated harmful factors
If deep trench isolation structure is formed to reduce substrate leakage, then substrate leakage is reduced, but process complexity increases
Solution Approach 1:
The patent combines multiple functions into the deep trench isolation structure: it provides electrical isolation to reduce substrate leakage, defines active device regions through its geometry, and serves as a mask for subsequent doping operations. By merging these functions into a single structural element, the process complexity is reduced compared to creating separate structures for each function.
Solution Approach 2:
The deep trench isolation structure performs multiple roles: electrical isolation, region definition, and doping mask. This multi-functionality reduces the need for additional separate structures and process steps, thereby reducing overall process complexity while effectively addressing substrate leakage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The HK film effectively mitigates substrate leakage and integrates seamlessly into existing processes, enhancing the reliability and cost-effectiveness of semiconductor manufacturing.
Implementation Method 1
a first dielectric layer disposed on the first surface and coupled to the deep trench isolation structure, wherein the first dielectric layer comprises a high-k dielectric material
Data Source
AI summary
A semiconductor structure includes a substrate with a first surface and a second surface opposite to the first surface, a first and a second shallow trench isolations disposed in the substrate and on the second surface, a deep trench isolation structure in the substrate and coupled to the first shallow trench isolation, a first dielectric layer disposed on the first surface and coupled to the deep trench isolation structure, a second dielectric layer disposed over the first dielectric layer and coupled to the deep trench isolation structure, a third dielectric layer comprising a horizontal portion disposed over the second dielectric layer and a vertical portion coupled to the horizontal portion, and a through substrate via structure penetrating the substrate from the first surface to the second surface and penetrating the second shallow trench isolation.