Deep-Trench MIM Capacitor Layout for High Capacitance Density
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to develop MIM capacitors with high capacitance in a small footprint to accommodate the increased density of integrated circuits on semiconductor substrates.
Innovation Solution
A semiconductor structure is designed with an MIM capacitor that incorporates an air gap and deep trench, formed by etching recesses in a transistor gate and filling them with dielectric and metal layers, to increase the effective area and capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the physical size of MIM capacitor is reduced to accommodate high density integration, then the capacitance per unit area decreases, but the requirement is to maintain high capacitance
Solution Approach 1:
The patent transitions from a planar capacitor structure to a three-dimensional deep trench structure. By etching deep trenches into the substrate and forming capacitor electrodes within these vertical trenches, the effective capacitance area is extended into the depth dimension. This allows the capacitor to achieve high capacitance values while occupying minimal surface area, directly resolving the contradiction between reduced footprint and maintained capacitance.
Solution Approach 2:
The patent embeds the MIM capacitor structure within the deep trench, nesting the capacitor electrodes and dielectric layers inside the trench cavity. This nested configuration allows the capacitor to be integrated within the existing semiconductor device structure without requiring additional lateral space, enabling high capacitance density while maintaining compact overall device footprint.
2Quantity of substance
If deep trench is formed to increase capacitance, then the manufacturing process complexity increases, but the goal is to achieve high capacitance in small size
Solution Approach 1:
The patent divides the capacitor formation process into distinct sequential steps: first forming the deep trench structure, then separately forming the bottom electrode, dielectric layer, and top electrode within the trench. This segmentation of the manufacturing process allows each step to be optimized independently and facilitates integration with existing semiconductor fabrication processes, managing overall process complexity while achieving the deep trench high-capacitance structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of an air gap and deep trench in the MIM capacitor enhances capacitance without significantly increasing the physical size, addressing the need for high-density capacitors in semiconductor integrated circuits.
Implementation Method 1
a dielectric layer is formed to fill part of the recess and the dielectric layer seals up an opening of the recess to form an air gap
Implementation Method 2
An MIM capacitor is disposed in the interlayer dielectric layer and the metal interlayer dielectric layer
Data Source
AI summary
A semiconductor structure with an MIM capacitor includes a first transistor. The first transistor includes a source and a drain. An interlayer dielectric layer covers the first transistor. A source plug penetrates the interlayer dielectric layer and contacts the source. A drain plug penetrates the interlayer dielectric layer and contacts the drain. A metal interlayer dielectric layer covers the interlayer dielectric layer. An MIM capacitor is disposed in the interlayer dielectric layer and the metal interlayer dielectric layer.