Deep Trench Moat Charge Discharge via Moat Contact
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Solution Overview
Problem
Deep trench moats in semiconductor devices experience isolation failure due to process-induced charge accumulation during fabrication, leading to breakdown and damage in electrical isolation.
Innovation Solution
The formation of moat contacts that electrically connect deep trench moats to a heavily doped epitaxial semiconductor layer, allowing accumulated charges to be discharged to ground, thereby preventing isolation failure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If deep trench moats are formed to provide electrical isolation between adjacent semiconductor circuits, then circuit noise and interference are reduced, but process-induced charge accumulation occurs during fabrication leading to isolation failure
Solution Approach 1:
The patent extracts the harmful accumulated charges from the deep trench moat by creating a discharge path through the moat contact that connects the DTMOAT to the heavily doped epitaxial semiconductor layer, allowing charges to be removed to ground rather than remaining trapped in the isolation structure
Solution Approach 2:
The moat contact serves as an intermediary element that bridges the DTMOAT and the heavily doped epitaxial semiconductor layer, enabling charge transfer from the isolation structure to the doped layer where charges can be safely discharged to ground
2Object-affected harmful factors
If deep trench moats are formed to provide electrical isolation, then noise reduction is achieved, but the fabrication process causes charge buildup that damages the isolation
Solution Approach 1:
The patent implements preliminary action by forming the moat contact during the fabrication process before the device is fully operational, proactively creating a charge discharge path that prevents charge accumulation damage before it can occur during subsequent processing or device operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents moat isolation failure by effectively discharging accumulated charges, ensuring reliable electrical isolation and improved semiconductor device performance.
Implementation Method 1
a moat contact electrically connecting the DTMOAT to the epitaxial semiconductor layer
Data Source
AI summary
A semiconductor structure is provided that includes a semiconductor on insulator (SOI) substrate comprising a bottom semiconductor layer, an epitaxial semiconductor layer present on the bottom semiconductor layer, a buried insulator layer present on the epitaxial semiconductor layer, and a top semiconductor layer present on the buried insulator layer. A deep trench moat (DTMOAT) is disposed in the SOI substrate and has a bottom surface contacting a dopant region of the bottom semiconductor layer. A moat contact electrically connecting the DTMOAT to the epitaxial semiconductor layer of the SOI substrate. Charges accumulated in the DTMOAT can be discharged through the heavily doped epitaxial semiconductor layer to ground, thus preventing the DTMOAT failure caused by the process-induced charge accumulation.