Deep Trench Capacitor Package Layout for Die Stack Warpage
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Solution Overview
Problem
The challenge of uneven stacking of die groups in semiconductor packaging leads to potential warpage and crack issues due to height differences, causing thermal and mechanical stress, which traditional stress relief methods fail to adequately address.
Innovation Solution
Embedding a deep trench capacitor (DTC) device in a carrier substrate to compensate for height differences between die groups, reducing the overall form factor and integrating it with the carrier substrate to alleviate stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple dies are stacked together to form die groups, then high performance and multi-functionality are achieved, but height differences between die groups cause warpage and mechanical stress
Solution Approach 1:
The patent applies local quality by embedding deep trench capacitors specifically in the carrier substrate at locations corresponding to die groups with lower heights. This localized compensation approach targets the specific problem areas (height differences) without affecting the entire package structure uniformly, allowing high-performance multi-die stacking while stabilizing the overall package geometry.
Solution Approach 2:
The patent changes the physical parameters of the carrier substrate by forming deep trenches and filling them with capacitive structures. This modifies the local mechanical and electrical properties of the carrier substrate, enabling it to compensate for height differences and reduce warpage while providing necessary electrical compensation for the stacked die configuration.
2Stability of the object's composition
If traditional stress relief methods are used, then some warpage is reduced, but they fail to adequately address thermal and mechanical stress from height differences
Solution Approach 1:
The deep trench capacitor structures act as intermediary elements between the carrier substrate and the stacked die groups. These capacitive structures serve dual functions: providing electrical compensation for signal integrity and acting as mechanical stress distribution elements that alleviate both warpage and thermal-mechanical stress, thereby improving overall package reliability.
Solution Approach 2:
The patent employs composite material structures in the deep trench capacitors, combining conductive materials for capacitance with dielectric and structural materials for mechanical support. This composite approach enables simultaneous achievement of electrical compensation and mechanical stress relief, addressing both warpage and reliability concerns that traditional single-function stress relief methods cannot handle.
3Stability of the object's composition
If deep trench capacitor is embedded in carrier substrate, then stress is uniformly distributed and warpage is reduced, but device complexity increases
Solution Approach 1:
The deep trench capacitor structures serve multiple functions simultaneously: they provide electrical compensation for signal integrity in stacked die configurations, act as mechanical stress distribution elements to reduce warpage, and contribute to thermal management. This multi-functionality reduces the need for separate dedicated stress relief structures, thereby limiting the increase in overall device complexity.
Solution Approach 2:
The patent merges the electrical compensation function and mechanical stress relief function into a single integrated structure (the deep trench capacitor). By combining these functions that would traditionally require separate components, the patent achieves effective stress distribution and warpage reduction while minimizing the increase in device complexity.
Data Source
AI summary
A semiconductor package is provided. The semiconductor package includes: a first die group comprising a plurality of dies vertically stacked together; a carrier substrate having a bottom surface, an upper surface, and a trench extending from the bottom surface toward the upper surface, wherein the bottom surface of the carrier substrate is bonded to an upper surface of the first die group; and a deep trench capacitor (DTC) die disposed in the trench and bonded to the carrier substrate, wherein the DTC die comprises a substrate and at least one DTC disposed in the substrate.