Deep Trench SCR Layout for Lower Trigger Voltage
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Solution Overview
Problem
Conventional silicon controlled rectifier (SCR) devices have high trigger voltage and large footprint, limiting their high current performance and efficiency.
Innovation Solution
The implementation of a deep trench isolation structure within semiconductor wells, combined with shallow trench isolation structures, to create a deeper current path and separate anode and cathode terminals, reducing trigger voltage and footprint.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional SCR device structure is used, then device can perform basic current control function, but trigger voltage is high and footprint is large
Solution Approach 1:
The patent introduces a deep trench isolation structure that extends vertically into the semiconductor substrate, creating a three-dimensional current path. This vertical dimension allows the current to travel deeper into the substrate, increasing the effective path length without increasing the horizontal footprint area, thereby reducing trigger voltage while maintaining compact device size.
Solution Approach 2:
The isolation structure is segmented into two distinct components: shallow trench isolation structures that extend to a first depth, and a deep trench isolation structure that extends to a greater second depth. This segmentation allows the device to optimize both surface-level isolation and deep substrate current path control, addressing multiple functional requirements simultaneously.
2Productivity
If conventional SCR device structure is used, then device maintains basic functionality, but high current performance is limited
Solution Approach 1:
By extending the isolation structure vertically into the substrate, the patent creates a longer current path that improves heat dissipation and current distribution. This three-dimensional approach enables the device to handle higher currents more effectively while maintaining stable holding voltage characteristics.
Solution Approach 2:
The deep trench isolation structure provides localized enhancement of the current path in specific regions of the substrate. By concentrating the isolation effect in particular areas rather than uniformly across the entire device, the patent optimizes high current performance in critical regions while maintaining overall device reliability.
Data Source
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AI summary
The present disclosure relates to semiconductor structures and, more particularly, to high performance silicon controlled rectifier (SCR) devices and methods of manufacture. The structure includes: a first well in a semiconductor substrate; a second well in the semiconductor substrate, adjacent to the first well; a plurality of shallow trench isolation structures extending into the first well and the second well; and a deep trench isolation structure between the plurality of shallow trench isolation structures and extending into the semiconductor material deeper than the plurality of shallow trench isolation structures.