Deep Trench Insulation Structure for Compact High-Voltage Isolation
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Solution Overview
Problem
Current deep trench insulation (DTI) technologies for high voltage semiconductor devices face challenges in manufacturing variability, leading to increased costs and reduced voltage breakdown risks due to variations in trench dimensions, necessitating separate integration steps and higher manufacturing costs for achieving different isolation capabilities.
Innovation Solution
The solution involves manufacturing both a first and a second deep trench insulation (DTI) in the same process steps, with the second DTI being smaller and filled with a solid insulating region, allowing for reduced dimensions and area while maintaining voltage capabilities, and enabling a 40% to 70% reduction in rail area without increasing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple DTIs with different dimensions are manufactured using current technology, then different isolation capabilities are achieved, but manufacturing costs increase and variability risks increase due to separate integration steps
Solution Approach 1:
The patent divides the single DIT structure into multiple segmented DTI structures with different dimensions (first DTI with larger dimensions, second DTI with smaller dimensions) that can provide different isolation capabilities. This segmentation allows each DTI to be optimized for specific voltage requirements while being manufactured together in the same process steps, reducing manufacturing costs and variability risks.
Solution Approach 2:
The patent creates a multi-functional insulation system where multiple DTI structures serve different isolation purposes within the same device. The first DTI provides isolation for higher voltage regions while the second DTI provides isolation for lower voltage regions, enabling a single insulation system to handle multiple voltage levels and device functions simultaneously.
2Reliability
If DTI dimensions are increased to ensure voltage breakdown protection, then voltage capabilities are maintained, but device area increases
Solution Approach 1:
The patent applies different DTI dimensions at different locations within the device based on local voltage requirements. The first DTI has larger dimensions for regions requiring higher voltage isolation, while the second DTI has smaller dimensions for regions with lower voltage requirements. This local quality approach ensures adequate voltage breakdown protection only where needed, minimizing overall device area.
Solution Approach 2:
The patent utilizes vertical dimension variations in DTI structures to provide different isolation capabilities. By creating DTIs with different depths and widths, the patent achieves multiple isolation levels without proportionally increasing the horizontal device area, effectively using the third dimension (depth) to solve the isolation vs. area trade-off.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for a significant reduction in device dimensions while maintaining voltage capabilities, reducing manufacturing costs and variability-related risks, and enabling the integration of multiple DTIs with different functions on a single chip.
Implementation Method 1
the second deep insulation structure comprises a solid insulating region filling the second trench
Implementation Method 2
the first deep insulation region comprises insulation walls surrounding a conductive filling portion
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
A high-voltage semiconductor device (100, 200) formed in a body (102) of semiconductor material having a surface (102A) and accommodating an active area (116); conductive regions (120-123); a first deep insulation structure (140) extending in the active area from the surface of the body in a first trench (111); and a second deep insulation structure (140) extending in the active area from the surface of the body in a second trench (141) and surrounding the conductive regions (120-123). The first deep insulation structure (140) has insulation walls (112) surrounding a conductive filling portion (113); the second deep insulation structure (140) is formed by a solid insulating region (142; 221) filling the second trench (141; 216'). The first deep insulation region has a first width (CD1) and a first depth (P1) and the second deep insulation structure has a second width (CD2) and a second depth (P2), the second width (CD2) being smaller than the first width (CD1) and the second depth (P2) being smaller than the first depth (P1).