Deep Trench Via Layout for Non-Aligned Frontside-Backside Wiring
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Solution Overview
Problem
In semiconductor manufacturing, misalignment of frontside and backside metal levels complicates communication between different metal tracks, rendering vertical vias ineffective for connection.
Innovation Solution
A semiconductor structure with a deep trench via connecting parallel frontside and backside metal wires, where the frontside metal wire is connected to the top surface of the trench via and the backside metal wire is connected to the bottom surface, allowing for orthogonal alignment and communication between misaligned metal levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If vertical vias are used to connect frontside and backside metal levels, then communication between metal tracks is enabled, but the solution fails when metal levels are misaligned
Solution Approach 1:
The patent transitions from a single vertical via connection to a multi-dimensional connection structure involving both vertical vias and lateral metal track segments. The frontside metal wire extends laterally from the via, and the backside metal wire extends laterally from the via, creating a three-dimensional interconnection path that can accommodate misalignment between frontside and backside metal levels.
Solution Approach 2:
The patent introduces intermediate metal wire segments that act as mediators between the vertical vias and the misaligned metal tracks. These intermediate segments provide the necessary lateral connection to bridge the gap caused by misalignment, enabling reliable communication between frontside and backside metal levels despite positional discrepancies.
2Adaptability or versatility
If deep trench vias are formed to connect misaligned metal levels, then communication between metal tracks is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the interconnection path into distinct functional components: vertical vias for depth traversal, lateral metal wire segments for horizontal alignment compensation, and connection nodes for signal transmission. This segmentation allows each component to be optimized independently and simplifies the overall manufacturing process by breaking down the complex misalignment compensation task into manageable steps.
3Productivity
If misalignment between frontside and backside metal levels occurs, then device density is enhanced, but connection between metal tracks becomes difficult
Solution Approach 1:
The patent employs dynamic connection paths that can adapt to varying misalignment conditions. The lateral extension segments of the metal wires are designed with flexible routing capabilities, allowing the connection path to dynamically adjust to the actual relative positions of frontside and backside metal levels, thereby maintaining ease of manufacture across different alignment scenarios while preserving high device density.
Data Source
AI summary
Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a deep trench via in a double diffusion region between a first dummy metal gate and a second dummy metal gate; a frontside metal wire conductively connected to a top surface of the deep trench via through a frontside via; and a backside metal wire conductively connected to a bottom surface of the deep trench via through a backside via and a backside contact, where the frontside metal wire and the backside metal wire are not vertically aligned but parallel to each other, and directions of the frontside and backside metal wires are orthogonal to a length direction of the deep trench via. A method of forming the same is also provided.