Deep-UV LED AlN Substrate for Visible Emission Confirmation
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Solution Overview
Problem
Deep ultraviolet semiconductor light-emitting elements emit light that is invisible to the naked eye, making it difficult to confirm whether they are driven and emitting light, posing a safety risk as operators may unknowingly expose themselves to the ultraviolet radiation.
Innovation Solution
An ultraviolet semiconductor light-emitting element with a single crystal AlN substrate, an n-type AlGaN layer, and a p-type AlGaN layer, where the substrate absorbs deep ultraviolet light and emits visible light in the range of 590 nm to 610 nm, allowing easy visual confirmation of the device's operation through visible red or orange color emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If deep ultraviolet light is emitted for sterilization, then sterilization effect is improved, but visibility for safety confirmation deteriorates
Solution Approach 1:
The patent introduces a phosphor layer as an intermediary substance between the deep ultraviolet light source and the external environment. This phosphor layer absorbs the invisible deep ultraviolet light (250-280 nm) and converts it to visible light (590-610 nm), serving as a mediator that translates the invisible sterilization radiation into a visible safety indicator without interfering with the primary sterilization function.
Solution Approach 2:
The patent utilizes color change phenomenon by employing a phosphor material that emits red or orange light (590-610 nm) when excited by deep ultraviolet light. This color emission provides visual feedback about the device's operational state, transforming the invisible ultraviolet radiation into a visible color signal that operators can easily detect for safety confirmation.
2Reliability
If deep ultraviolet light emission is increased, then sterilization capability is improved, but safety risk from unnoticed exposure increases
Solution Approach 1:
The patent implements a visual feedback mechanism where the phosphor layer emits visible light in response to deep ultraviolet light generation. This creates a direct feedback loop: when the ultraviolet light source is active and producing sterilization radiation, the phosphor simultaneously emits visible light to inform operators of the active state, ensuring they are aware of potential exposure risks.
Solution Approach 2:
The phosphor layer acts as a safety intermediary that provides visible warning signal proportional to the ultraviolet light intensity. It translates the harmful invisible radiation into a benign visible signal, allowing operators to perceive the operational state and take appropriate safety precautions without being directly exposed to high-intensity ultraviolet light.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables users to easily recognize when the ultraviolet semiconductor light-emitting element is driven, enhancing safety by providing a visible indication of its operation through red or orange color emission, while maintaining sufficient deep ultraviolet light emission for sterilization purposes.
Implementation Method 1
the substrate absorbs deep ultraviolet light and emits visible light in the range of 590 nm to 610 nm
Data Source
AI summary
An object of the present invention is to provide an ultraviolet semiconductor light-emitting element that allows a user to easily confirm whether or not it is driven to emit the deep ultraviolet light. An ultraviolet semiconductor light-emitting element according to the present invention includes a single crystal AlN substrate, an n-type AlGaN layer, an active layer, and a p-type AlGaN layer. The n-type AlGaN layer is formed on the single crystal AlN substrate. The active layer is formed on the n-type AlGaN layer. The active layer has a light emission peak wavelength of 250 nm or more and 280 nm or less. The p-type AlGaN layer is formed on the active layer. The C concentration in the single crystal AlN substrate is 3×1017 atoms/cm3 or more.