Deep-Well Semiconductor Surge Suppressor for Lightning Protection
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Solution Overview
Problem
Current programmable semiconductor surge suppressors, such as the P61089, are insufficient in anti-lightning and anti-surge performance, with a maximum protection level of around 2000 V, which can lead to damage from lightning strikes and surges in telephone communication equipment.
Innovation Solution
A programmable semiconductor surge suppressor with a deep-well structure, comprising PN junction diodes, PNPN-type thyristors, and NPN-type triodes, featuring a concave-convex PN junction interface and optimized impurity concentration gradients to enhance discharge capability, increasing the effective contact area and reducing resistivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional programmable semiconductor surge suppressor (P61089) is used, then the device provides basic surge protection with programmable voltage, but the anti-lightning performance is limited to around 2000 V
Solution Approach 1:
The patent changes the physical and chemical parameters of the semiconductor structure by introducing a deep-well architecture with graded impurity concentration (P+, P, N, N+ layers) and optimized junction characteristics, thereby increasing the breakdown voltage from 2000 V to 3000-3500 V and improving anti-lightning performance
Solution Approach 2:
The patent employs a composite semiconductor structure combining multiple doped layers (P-type heavy diffusion, P-type diffusion, N-type light doped, N-type heavy implanted) to create a deep-well PN junction with enhanced electrical characteristics and higher surge withstand capability
2Loss of energy
If the protection device structure is simplified, then the manufacturing cost is reduced, but the energy discharge capability is insufficient
Solution Approach 1:
The patent segments the semiconductor structure into distinct functional layers (P+ contact layer, P diffusion layer, N light doped layer, N+ substrate) with each layer serving specific purposes for charge distribution and discharge, enabling enhanced energy handling capability through structured segmentation
Solution Approach 2:
The patent applies local quality optimization by creating a deep-well structure with varying impurity concentrations at different depths and locations, where the P-type diffusion layer and N-type layers are strategically positioned to optimize electric field distribution and energy dissipation in critical regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The improved design achieves a higher anti-lightning performance level of 3000-3500 V, providing enhanced protection against surges and lightning strikes, with increased energy discharge capability and broader voltage endurance.
Implementation Method 1
each of the protection units being composed of a PN junction diode, a PNPN-type thyristor and a NPN-type triode
Implementation Method 2
based on the PNPN structure and principle
Implementation Method 3
anode of the diode and cathode of the thyristor, connected with each other, act together as Port K of the protection unit
Data Source
AI summary
A protection device of programmable semiconductor surge suppressor having deep-well structure is provided comprising one, two or four protection units, each of which is composed of a PN-junction diode, a PNPN-type thyristor and a NPN-type triode connected with each other. It is characterized in that in the diode area on the frontal side of the N-type semiconductor base is formed a PN junction with impurity concentration changed gradiently from top to bottom according to the order of P+, P, N and N+; and a group of deep-wells with P-type impurities are positioned at the interface of the PN junction, making the PN junction form a concave-convex type interface. The present invention can be used in the program-controlled switchboard to protect the Subscriber Line Interface Circuit (SLIC) board. The above improvement can further improve the anti-lightning and anti-surge performance and the energy discharge capability of the whole device. The device of the present invention can reach a level of 3000˜3500 V according to the anti-lightning performance test.