Defect Correction Device for Electronic Circuit Patterns Using Infrared Imaging
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Solution Overview
Problem
Conventional defect correction methods for electronic circuit patterns, such as those in liquid crystal display panels, struggle to detect and correct defects like short-circuits in thin film transistors due to limitations in optical inspection, particularly with residues of high-concentration semiconductor layers that are difficult to recognize using visible light.
Innovation Solution
A defect correction method and device that utilize imaging with both visible and infrared light wavelengths to detect and correct defects, including short-circuits in thin film transistors, by using a laser to process semiconductor and insulating layers, and an optical system capable of observing these wavelengths to enhance defect recognition and correction precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If visible light inspection is used to detect defects, then the inspection method is simple and equipment is readily available, but defects such as residues of high-concentration semiconductor layers cannot be detected
Solution Approach 1:
The patent changes the wavelength parameter of inspection light from visible light to infrared light. This parameter change enables the detection of defects such as high-concentration semiconductor layer residues that are invisible under visible light, while the infrared inspection system maintains a structure similar to conventional visible light inspection devices, thus improving detection capability without significantly increasing system complexity
Solution Approach 2:
The patent replaces visible light inspection with infrared light inspection. This substitution allows the detection system to perceive defects that are invisible to the human eye and undetectable by conventional visible light microscopes, thereby enhancing measurement precision while using inspection equipment with comparable mechanical structures
2Manufacturing precision
If laser irradiation is used to correct wiring short-circuits, then the correction is precise and targeted, but the method cannot effectively address semiconductor layer residues causing short-circuits
Solution Approach 1:
The patent implements a feedback mechanism where infrared inspection results are used to guide laser correction. The infrared inspection first identifies the precise location and nature of defects including semiconductor layer residues, then this information feeds back to control the laser irradiation process, ensuring that the correction is both precise and effective for the specific defect type detected
Solution Approach 2:
The patent performs preliminary infrared inspection before laser correction to accurately identify defect types and locations. This preliminary action allows the system to understand what needs to be corrected, enabling the subsequent laser irradiation to be precisely targeted and effective, particularly for semiconductor layer residues that would be missed by visible light inspection
3Productivity
If conventional inspection methods are used, then the inspection process is fast and simple, but the detection of short-circuit defects and their seeds is inaccurate
Solution Approach 1:
The patent changes the inspection wavelength parameter to infrared, which maintains fast inspection speeds comparable to visible light methods while dramatically improving defect detection accuracy. The infrared inspection can identify both short-circuit defects and their seeds (such as high-concentration semiconductor layer residues) that are invisible under visible light, thus enhancing measurement precision without significantly reducing productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach makes previously difficult-to-detect defects obvious, allowing for precise correction and normalization of pixel states, improving the reliability of defect detection and correction in electronic circuit patterns.
Implementation Method 1
a semiconductor layer forming unit for forming a semiconductor layer at a pixel portion; an imaging unit for irradiating a defective portion of an electronic circuit pattern with light having a wavelength of an infrared light region, and receiving reflected light having the wavelength of the infrared light region from the electronic circuit pattern
Data Source
AI summary
Provided is a defect correcting device for an electronic circuit pattern, which is capable of making a defect seed obvious, and normalizing a pixel or forming a pixel into a semi-black spot. A defect correcting device for an electronic circuit pattern includes: an imaging unit for irradiating a defective portion of the electronic circuit pattern with irradiation light having a wavelength of a visible light region and a wavelength of an infrared light region, and receiving reflected light having the wavelength of the visible light region and the wavelength of the infrared light region from the electronic circuit pattern; a signal processing unit for extracting the defective portion from a picked-up image, and determining a correcting method; a laser irradiating unit for irradiating the defective portion with laser light; and a correction determining unit for determining success or failure of defect correction before and after laser irradiation.