Defect Pattern Evaluation via Occurrence Rate Calculation

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Solution Overview

Problem

Existing methods for evaluating pattern defects in semiconductor manufacturing struggle to accurately extract and prioritize defects with low detection numbers but high importance, leading to potential missed critical defects and reduced manufacturing yield.

Innovation Solution

A defect pattern evaluation method and apparatus that calculates and ranks defect occurrence rates by pattern layout, using a combination of optical inspection, scanning electron microscopy, and design-based binning to identify and prioritize systematic defects based on their probability of occurrence rather than mere detection numbers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If patterns are classified and ranked based on the number of defects detected, then the quantity of defects is improved, but the accuracy of extracting important defects with low detection numbers deteriorates

Engineering Contradiction:
Improvenumber of defects detectedVSAvoidaccuracy of extracting important defects
Core Design Contradiction:
Quantity of substanceVSMeasurement precision

Solution Approach 1:

The patent changes the evaluation parameter from defect detection number to defect occurrence rate. By calculating the ratio of defect detection number to pattern arrangement number, the system transforms the assessment metric to account for both the frequency of defects and the total number of patterns, thereby accurately identifying important defects regardless of their absolute detection count

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent segments the evaluation process into two distinct components: defect detection (quantifying defects) and pattern arrangement counting (quantifying total patterns). By separately measuring these elements and combining them through division, the system achieves a more nuanced evaluation that prevents important but low-count defects from being overlooked

Inventive Principle:
Principle #1Segmentation

2Productivity

If focus on high detection number patterns, then productivity of defect review is improved, but reliability of detecting critical systematic defects deteriorates

Engineering Contradiction:
Improvedefect review efficiencyVSAvoiddetection of critical systematic defects
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent changes the prioritization parameter from defect detection number to defect occurrence rate. This parameter transformation enables the system to identify critical systematic defects based on their relative frequency within pattern types, ensuring that even defects with low absolute counts but high occurrence rates are prioritized for review

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent implements a feedback mechanism where defect occurrence rates are calculated and used to adjust the review priority. By continuously evaluating the ratio of defects to total patterns and using this information to guide subsequent review efforts, the system ensures that resources are allocated to the most critical defect types while maintaining high productivity

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for the accurate extraction and evaluation of important pattern defects with low detection numbers, enhancing process margin evaluation and improving manufacturing yield by focusing on high-risk defects, even if they occur infrequently.

Implementation Method 1

defects are detected by performing optical defect inspection on a pattern on a substrate

Methodology Applied
Scientific EffectOptical inspection: Light

Implementation Method 2

using a combination of optical inspection, scanning electron microscopy

Methodology Applied
Scientific EffectElectron beam: Electron Beam

Data Source

PatentUS9202763B2Defect pattern evaluation method, defect pattern evaluation apparatus, and recording media
Publication Date: 2015.12.01 KIOXIA CORP
  • US9202763B2 patent drawing
  • US9202763B2 patent drawing
  • US9202763B2 patent drawing

AI summary

According to a defect pattern evaluation method of an embodiment, defects are detected by performing optical defect inspection on a pattern on a substrate. Then, the defects are classified according to a type of a pattern layout using a pattern layout corresponding to coordinates of the defects. Further, a computer calculates a defect occurrence rate by dividing the number of defects of each pattern layout by an arrangement number of the pattern layouts in an inspection region. Then, the defect occurrence rate of each pattern layout is output as an evaluation result.