Selective Deposition Defect Removal via Chemical Etch
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Solution Overview
Problem
The semiconductor industry faces challenges in selective deposition processes, particularly with self-assembled monolayers (SAMs), where achieving 100% blocking of metal oxide deposition on dielectric surfaces is difficult, leading to defects and issues in subsequent processes like SAM removal and mask removal.
Innovation Solution
A method involving the use of a blocking compound with a metal-halogen precursor for defect removal, where a substrate with different materials is exposed to a blocking layer formation followed by a defect removal process using metal-halogen precursors like WClx, HfClx, or RuClx to efficiently remove defects from the blocking layer on the dielectric surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a blocking layer is formed using self-assembled monolayers to achieve selective deposition on dielectric surfaces, then selectivity of deposition is improved, but defects comprising metal oxide growth on blocked surfaces occur
Solution Approach 1:
The patent applies preliminary action by performing a defect removal process after selective deposition to eliminate metal oxide defects that formed on the dielectric surface. This two-step approach (selective deposition followed by defect removal) ensures both high selectivity and defect-free surfaces, resolving the contradiction between achieving blocking selectivity and preventing defects
Solution Approach 2:
The patent extracts and removes the harmful metal oxide defects from the dielectric surface after selective deposition. By separating the deposition step from the defect removal step, the process achieves both selective blocking and defect-free surfaces, resolving the contradiction between selectivity and manufacturing precision
2Adaptability or versatility
If SAM passivation is used to block metal oxide deposition on dielectric surfaces, then selective deposition is enabled, but small amount of metal oxide still grows creating defects
Solution Approach 1:
The patent introduces an intermediary defect removal process that acts as a mediator between selective deposition and subsequent processing. This intermediary step removes the small amount of metal oxide defects that inevitably form during SAM passivation, maintaining both adaptability for selective deposition and manufacturing precision
3Reliability
If excessive SAM precursor exposure is applied to ensure complete blocking, then blocking effectiveness is improved, but droplet defects form on the SAM surface
Solution Approach 1:
The patent converts the harmful droplet defects formed during excessive SAM precursor exposure into a removable intermediate state. By introducing a defect removal process, the droplet defects are transformed from a process failure into a temporary condition that can be eliminated, maintaining blocking effectiveness while eliminating harmful factors
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes defects from the blocking layer, improving the selective deposition process and enabling more efficient integration schemes by reducing metal oxide defects on dielectric surfaces, thus enhancing the reliability of SAM-promoted selective deposition.
Implementation Method 1
Self-Assembled Monolayer (SAM) is an approach to enable selective deposition on multiple material surfaces
Implementation Method 2
defects are removed from the blocking layer on the first surface
Data Source
AI summary
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.