Elastically Deflectable Transistor Gate for Force Sensing
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Solution Overview
Problem
Current micromechanical sensors, such as those used in force measurement, are heavily dependent on ambient conditions like temperature, which affects their precision due to their material properties and structural characteristics.
Innovation Solution
A transistor structure with a control electrode that is elastically deflectable under force, sharing the same monocrystalline lattice structure as the semiconductor substrate, forming a 'nanogap' over the channel region, allowing for precise force measurement by changing the distance between the control electrode and the channel, thus minimizing external influence effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If piezoresistive, piezoelectrical or capacitive elements are used for force measurement in micromechanical systems, then measuring functionality is achieved, but precision is reduced due to strong dependence on ambient conditions such as temperature
Solution Approach 1:
The control electrode is formed with the same monocrystalline semiconductor material as the substrate, creating identical material characteristics and thermal expansion properties. This homogeneity eliminates differential thermal stress and reduces temperature dependency, allowing precise force measurement without compensation for ambient temperature variations.
Solution Approach 2:
The control electrode replicates the substrate's monocrystalline lattice structure, creating a copy of the ideal crystal structure. This copying ensures that the control electrode responds only to applied forces and not to thermal effects, since it shares the same thermal properties as the substrate it is formed from.
2Ease of operation
If the control electrode portion is made elastically deflectable to detect force changes, then measurement capability is enabled, but structural stability is reduced due to material property variations with ambient conditions
Solution Approach 1:
By forming the control electrode from the same monocrystalline semiconductor material as the substrate, the invention creates homogeneous material properties throughout the structure. This homogeneity ensures that thermal expansion and other ambient condition effects are uniform across the entire device, stabilizing the mechanical properties and enabling reliable force detection.
3Ease of manufacture
If different materials are used for the substrate and control electrode structure, then manufacturing flexibility is improved, but precision is reduced due to different material characteristics affecting thermal and mechanical behavior
Solution Approach 1:
The invention uses the same monocrystalline semiconductor material for both the substrate and the control electrode, creating a homogeneous structure. This eliminates the need for material matching and interface compatibility issues that arise with heterogeneous materials, while simultaneously improving precision by eliminating differential thermal and mechanical effects.
Solution Approach 2:
The control electrode is formed as an integral part of the substrate using the same material, merging what would traditionally be separate components. This integration eliminates material interfaces and ensures uniform thermal and mechanical properties throughout the structure, improving both manufacturing simplicity and measurement precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the robustness and precision of force measurement by maintaining identical material characteristics between the substrate and the gate structure, reducing temperature dependency and improving mechanical stability, enabling precise detection of force changes.
Implementation Method 1
a control electrode portion spaced apart from the channel region, which is deflectable elastically under the action of a force
Data Source
AI summary
A transistor structure includes a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate. Additionally, the transistor structure includes a control electrode associated with the channel region, the control electrode having a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region. The distance between the control electrode portion and the channel region is changed based on the action of force.