Deflection Electrode Ion Angular Distribution Control
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Solution Overview
Problem
Conventional ion processing apparatuses lack precise control over ion angular distribution, which is essential for effectively treating substrates with complex surface features such as sidewalls during implantation or etching processes.
Innovation Solution
A processing apparatus with a plasma source, an extraction plate, and a deflection electrode that adjusts the angle of incidence of ions by varying the bias voltage applied to the deflection electrode, allowing for in-situ control of ion angular distribution by generating different angles of incidence through the aperture.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If ions are extracted through an aperture of fixed geometry, then the ion angular distribution is determined by the aperture shape and size, but further control over the mean angle and angular spread is limited
Solution Approach 1:
The patent introduces a movable deflection electrode that can be positioned at different locations relative to the aperture, enabling dynamic adjustment of the ion angular distribution. The electrode's position is varied to change the electric field configuration, which in turn modifies the ion trajectories and angular spread without requiring multiple aperture geometries or complex extraction systems.
2Adaptability or versatility
If the aperture geometry is changed to control ion angular distribution, then different aperture shapes and sizes are required for different processing needs, but this increases the complexity of the extraction system
Solution Approach 1:
The patent controls ion angular distribution by changing the position parameter of a single deflection electrode rather than changing the geometric parameters of the aperture. By adjusting the electrode's location, the electric field distribution is modified, which dynamically changes the ion extraction angles and angular spread, providing versatility without requiring multiple aperture designs.
3Ease of operation
If a single deflection electrode position is used, then the extraction system is simpler, but the ability to treat substrates with complex surface features is reduced
Solution Approach 1:
The patent employs a dynamically positionable deflection electrode that can be moved to different locations during operation. This dynamic positioning capability allows the system to adapt to different substrate geometries and processing requirements, improving ease of operation for complex surface features while maintaining a relatively simple single-electrode configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control over ion beams to effectively treat substrates with complex features by adjusting the mean angle and angular spread of ion distribution, improving processing outcomes such as implantation and etching efficiency.
Implementation Method 1
a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber, and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma
Implementation Method 2
ions are extracted through an aperture of special geometry located in an extraction plate that is placed proximate a plasma
Data Source
AI summary
A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.