Deformable Membrane Semiconductor Device with Elastic Support

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Solution Overview

Problem

MEMS semiconductor devices with deformable membranes for measuring acceleration, vibration, or pressure face challenges in achieving high vibration sensitivity and low noise due to the trade-off between mass and stiffness, where increasing mass for sensitivity reduces robustness and introduces unwanted tilting modes, and existing etching techniques lack precision for forming elongated mass elements.

Innovation Solution

The semiconductor device incorporates a deformable membrane connected to a support structure through elastic supporting connections, allowing for reduced stiffness and increased displacement of a mass element with an elongated shape, while maintaining high mass, by using apertures and metal materials, and employing techniques like metal plating or physical vapor deposition for precise mass element fabrication.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the mass element is made larger to increase vibration sensitivity, then the sensitivity is improved, but the robustness deteriorates

Engineering Contradiction:
Improvevibration sensitivityVSAvoidrobustness
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent changes the geometric parameters of the mass element by making it elongated rather than circular, which increases the mass while controlling the stiffness characteristics. This parameter change allows achieving higher sensitivity without proportionally increasing robustness issues.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The mass element is designed with significant elongation in one dimension compared to the other dimensions, creating an asymmetric geometry. This dimensional approach increases mass without uniformly increasing stiffness, resolving the contradiction between sensitivity and robustness.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Quantity of substance

If the mass element is made elongated to increase mass without changing stiffness, then the mass is increased, but the barycenter moves away from the membrane causing unwanted tilting modes

Engineering Contradiction:
ImprovemassVSAvoidtilting modes
Core Design Contradiction:
Quantity of substanceVSObject-generated harmful factors

Solution Approach 1:

The mass element is designed with asymmetric elongation where one dimension is significantly larger than the others. This asymmetric geometry allows mass concentration while controlling the moment of inertia distribution to minimize tilting mode excitation.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The mass element has non-uniform mass distribution due to its elongated shape, with higher mass concentration in specific regions. This local mass distribution optimization increases overall mass while keeping the barycenter position controlled to reduce harmful tilting effects.

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If traditional etching techniques are used to make the mass element, then the manufacturing process is simple, but the precision is insufficient for elongated mass elements

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoidmass element geometry precision
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent replaces traditional mechanical etching processes with deposition techniques (such as physical vapor deposition or chemical vapor deposition) to form the mass element. This substitution enables precise control of the elongated geometry while maintaining ease of manufacture through standard semiconductor fabrication processes.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces tilting effects and increases robustness, enabling precise measurement of vibrations and pressures with improved sensitivity and noise reduction, allowing for the use of metal materials that were previously impractical due to stiffness concerns.

Implementation Method 1

the at least one supporting connection includes at least one elastic supporting connection

Methodology Applied
Scientific EffectElasticity: Elasticity

Implementation Method 2

Information on the membrane's deformation is provided through an electric signal, e.g. through a capacitive, piezoelectric, or piezoresistive technique

Methodology Applied
Scientific EffectCapacitive effect: Capacitance

Implementation Method 3

Information on the membrane's deformation is provided through an electric signal, e.g. through a capacitive, piezoelectric, or piezoresistive technique

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 4

Information on the membrane's deformation is provided through an electric signal, e.g. through a capacitive, piezoelectric, or piezoresistive technique

Methodology Applied
Scientific EffectPiezoresistive effect: Piezoresistive Effect

Implementation Method 5

employing techniques like metal plating or physical vapor deposition for precise mass element fabrication

Methodology Applied
Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Data Source

PatentUS20230416078A1Semiconductor Device
Publication Date: 2023.12.28 INFINEON TECHNOLOGIES AG
  • US20230416078A1 patent drawing
  • US20230416078A1 patent drawing
  • US20230416078A1 patent drawing

AI summary

A semiconductor device has a deformable membrane, e.g., for the measurement of at least one of an acceleration, a vibration, or a pressure. The membrane has a supporting connection with a support structure which includes at least one elastic supporting connection. Also disclosed are a sensor device including the semiconductor device along with methods for manufacturing the semiconductor device and the sensor device.