Deformable Substrate Support for Diamond Bonding
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Solution Overview
Problem
The diamond substrate's brittleness makes it prone to breakage when pressure is applied to bond it with a semiconductor substrate, as it cannot withstand deformation, risking damage during the surface-activated joining process.
Innovation Solution
A semiconductor manufacturing method and device that use deformable support bases to apply pressure and bring the diamond and semiconductor substrates into close contact without deforming the diamond substrate, by shaping the support bases to match the substrate surfaces and applying pressure in the thickness direction, allowing for chemical bonding without breakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If pressure is applied to bring the diamond substrate and semiconductor substrate into close contact for chemical bonding, then the bonding quality is improved, but the diamond substrate may break due to its brittleness
Solution Approach 1:
A pressure-applying mechanism is introduced as an intermediary component between the diamond substrate and the external pressure source. This mechanism applies pressure to the semiconductor substrate indirectly, preventing direct stress concentration on the brittle diamond substrate while still achieving close contact for chemical bonding.
Solution Approach 2:
The pressure distribution is made non-uniform, with higher pressure applied to the semiconductor substrate and lower pressure to the diamond substrate. This localized pressure strategy allows the bonding interface to achieve close contact while protecting the diamond substrate from excessive stress that would cause breakage.
2Manufacturing precision
If the diamond substrate is flattened to reduce surface roughness for surface-activated joining, then the bonding effectiveness is improved, but the diamond substrate warpage increases
Solution Approach 1:
The semiconductor substrate is pre-flattened and pre-positioned on the support base before the diamond substrate is placed. This preliminary preparation creates a stable, flat bonding interface that compensates for the diamond substrate's warpage, allowing surface-activated joining to proceed effectively without requiring extreme flattening of the diamond substrate.
Solution Approach 2:
The support base acts as an intermediary platform that provides a flat reference surface for the semiconductor substrate. This intermediary structure absorbs the warpage issues of the diamond substrate while maintaining the required surface flatness for bonding at the interface.
3Force
If a rigid support base is used to apply pressure, then the pressure transmission is efficient, but the diamond substrate deforms and may break
Solution Approach 1:
The support base material properties are changed from rigid to compliant, allowing the base to deform elastically under pressure. This parameter change enables the support base to conform to the diamond substrate's surface topology, distributing pressure uniformly and preventing stress concentration that would lead to substrate breakage.
Solution Approach 2:
The support base is designed to be dynamically compliant rather than statically rigid. It can adjust its shape and pressure distribution in response to the diamond substrate's warpage and surface features, maintaining optimal contact pressure without causing deformation or breakage to the brittle substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces the risk of breakage in the diamond substrate during bonding, enabling close contact and chemical binding while minimizing deformation and damage, thus enhancing the bonding process's reliability and efficiency.
Implementation Method 1
a pressure is applied to the diamond substrate and the semiconductor substrate in a thickness direction
Implementation Method 2
deforming a surface of the first substrate support base opposed to the second substrate support base in conformity with a shape of a surface of the diamond substrate
Implementation Method 3
a rare gas beam is applied to the joint surface between the diamond substrate and the semiconductor substrate to activate the joint surface
Implementation Method 4
chemically bind the diamond substrate and the semiconductor substrate to each other
Data Source
AI summary
The semiconductor manufacturing device includes: a lower substrate support base configured to support a diamond substrate; an upper substrate support base configured to support a semiconductor substrate; a support base drive unit configured to move the lower substrate support base and the upper substrate support base to bring the diamond substrate and the semiconductor substrate into close contact with each other under a state in which a pressure is applied to the diamond substrate and the semiconductor substrate in a thickness direction; and a second mechanism configured to deform a surface of the upper substrate support base opposed to the lower substrate support base so that a surface of the semiconductor substrate opposed to the diamond substrate forms a parallel surface or a parallel plane with respect to a surface of the diamond substrate opposed to the semiconductor substrate.